K4B4G1646E-BCNB vs K4B4G1646 Comparison
Detailed side-by-side comparison of K4B4G1646E-BCNB by Samsung Electronics and K4B4G1646 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BCNB - 4Gb DDR3 SDRAM, 256Mx16, 1.35V | Samsung
K4B4G1646E-BCNB ✓ Active
Specification Comparison
| Parameter | K4B4G1646E-BCNB | K4B4G1646 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $13.52 | $11.96 |
| Memory Type | DDR3 SDRAM | DDR3 SDRAM |
| Memory Size | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V (1.283 V to 1.45 V) | 1.5 V (DDR3L variants 1.35 V) |
| Data Rate | 1866 Mbps | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Operating Temperature | 0C to +95C | 0C to +95C |
| Package | 96-ball FBGA | 96-FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | [DATA_NEEDED: RoHS status] |
| Number of Pins | 96 | — |
| Interface Type | Parallel | — |
| Refresh | 8K / 64 ms | — |
| Burst Length | 8, 4 (fixed) | — |
| Write Recovery Time | [DATA_NEEDED: tWR] | — |
| Row Cycle Time | [DATA_NEEDED: tRC] | — |
| Row Address Strobe to Column Address Strobe Delay | [DATA_NEEDED: tRCD] | — |
| Row Precharge Time | [DATA_NEEDED: tRP] | — |
| Active to Precharge Time | [DATA_NEEDED: tRAS] | — |
| Interface | — | Parallel |
| Max Data Rate | — | Up to 2133 Mbps (grade dependent) |
| Clock Frequency Range | — | 800 MHz to 2133 Mbps (grade dependent) |
| On-Chip Termination (ODT) | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask Function | — | Yes |
| Die Revisions | — | B-die, D-die, Q-die (DDR3L) |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |