K4B4G1646E-BYK000 vs K4B4G1646D-BYH9 Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK000 by Samsung Electronics and K4B4G1646D-BYH9 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ ActiveSamsung Electronics
K4B4G1646D-BYH9 - 4Gb DDR3L SDRAM 256Mx16 1333Mbps | Samsung
K4B4G1646D-BYH9 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYK000 | K4B4G1646D-BYH9 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.56 | $2.30 |
| Memory Type | DDR3L SDRAM | — |
| Memory Size | 4 Gbit | — |
| Organization | 256M x 16 | 256M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | 8 |
| Die Process | Samsung E-die | — |
| Package | 96-FBGA (BYK) | 96FBGA |
| Mounting Type | Surface Mount | — |
| Interface | Parallel | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0 ~ 85 °C |
| Features | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | — |
| Access Time | 1.25 ns | — |
| Density | — | 4 Gb |
| Data Rate | — | 1333 Mbps |
| Supply Voltage | — | 1.35 V |
| CAS Latency | — | Programmable |
| Write Latency | — | Programmable |
| On-Die Termination | — | Yes |
| Internal Calibration | — | Yes |
| Lead-Free | — | Yes |
| Halogen Free | — | Yes |
| RoHS Compliant | — | Yes |
| Die Version | — | D-die |