K4B4G1646E-BYK000 vs MT41K128M16JT-125 AUT:K Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK000 by Samsung Electronics and MT41K128M16JT-125 AUT:K by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ ActiveMicron Technology
MT41K128M16JT-125 AUT:K - 2Gbit DDR3L SDRAM 96-FBGA | Micron
MT41K128M16JT-125 AUT:K ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYK000 | MT41K128M16JT-125 AUT:K |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.56 | $12.17 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | 2 Gbit |
| Organization | 256M x 16 | 128M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | -125 (1600 MT/s) |
| Clock Frequency | 800 MHz | 800 MHz |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| Package | 96-FBGA (BYK) | 96-FBGA (8x14) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | Parallel |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40C to +125C |
| Features | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Access Time | 1.25 ns | 13.75 ns |
| Supply Voltage | — | 1.35 V |
| Automotive Qualification | — | Yes (AUT part number suffix) |
| Marking Code | — | D9VKD |
| Data Rate | — | 1600 MT/s |
| Packaging Option | — | Tape & Reel (TR suffix variant available) |