K4B4G1646E-BYK000 vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK000 by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ Active
Specification Comparison
| Parameter | K4B4G1646E-BYK000 | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.56 | $6.36 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Memory Size | 4 Gbit | 4Gbit (256M x 16) |
| Organization | 256M x 16 | — |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | 800 MHz |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| Package | 96-FBGA (BYK) | 96-FBGA (9x14 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | — |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Features | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Access Time | 1.25 ns | 13.75 ns |
| Data Bus Width | — | 16 bit |
| Supply Voltage | — | 1.35 V |
| Number of Pins | — | 96 |
| Lead-Free | — | Yes |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |
| CAS Latency | — | 11 |