K4B4G1646E-BYMA vs H5TC4G63CFR-XXJ Comparison

Detailed side-by-side comparison of K4B4G1646E-BYMA by Samsung Electronics and H5TC4G63CFR-xxJ by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646E-BYMA K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA - 4Gb DDR3L SDRAM 1866MHz | Samsung

K4B4G1646E-BYMA ✓ Active
SK hynix
H5TC4G63CFR-xxJ H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-xxJ - 4Gb DDR3L SDRAM 256Mx16 | SK Hynix

H5TC4G63CFR-xxJ ✓ Active

Specification Comparison

Parameter K4B4G1646E-BYMA H5TC4G63CFR-xxJ
Brand Samsung Electronics SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $14.32 $5.90
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4 Gb 4 Gb
Organization 256M x 16 256M x 16
Supply Voltage 1.35 V (1.28 V to 1.575 V) —
Clock Frequency 933 MHz —
Data Rate 1866 Mbps/pin —
Operating Temperature 0°C to +95°C —
Operating Current 14 mA —
Standby Current 2 mA, 3 mA —
Package FBGA-96 96-ball FBGA
Mounting Type Surface Mount —
RoHS Compliant Compliant
CAS Latency [DATA_NEEDED: CAS Latency] [DATA_NEEDED: CAS latency options]
Burst Length [DATA_NEEDED: Burst Length] 8 and 4 (with burst chop)
Number of Pins 96 —
Supply Voltage (VDD/VDDQ) — 1.35V + 0.100 / - 0.067V
Clock Input — Fully differential (CK, CK#)
Data Strobe — Differential (DQS, DQS#)
On-Chip DLL — Yes
DM Mask — Yes
Operating Temperature Range — 0°C to 95°C (case)
Lead-Free — Yes
Halogen Free — Yes
Speed Grade — [DATA_NEEDED: speed grade for -xxJ suffix]
On-Die Termination — Yes
Refresh — Auto-refresh and self-refresh

Datasheets & Resources

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