K4B4G1646I-BYK0 vs K4B4G1646E-BYK000 Comparison
Detailed side-by-side comparison of K4B4G1646I-BYK0 by Samsung Electronics and K4B4G1646E-BYK000 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646I-BYK0 | K4B4G1646E-BYK000 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gb | 4 Gbit |
| Organization | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35 V | — |
| Data Rate | 1866 Mbps | — |
| Clock Frequency | 933 MHz | 800 MHz |
| Package | FBGA-96 | 96-FBGA (BYK) |
| Operating Temperature | 0°C to 95°C (Tc) | [DATA_NEEDED: operating temperature range] |
| Interface | Parallel | Parallel |
| Number of Banks | 8 | [DATA_NEEDED: bank count] |
| CAS Latency | [DATA_NEEDED: CAS Latency] | — |
| Burst Length | 8, 4 | — |
| RoHS | Compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Lead-Free | Yes | — |
| Speed Grade | — | DDR3-1600 (1.25 ns clock cycle) |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] |
| Supply Voltage (VDD) | — | 1.35 V (DDR3L), 1.5 V compatible (DDR3) |
| Die Process | — | Samsung E-die |
| Features | — | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask |
| RoHS Status | — | [DATA_NEEDED: RoHS status] |
| Access Time | — | 1.25 ns |