K4RAH086VB-BCWM vs K4RAH165VB-BIQK Comparison
Detailed side-by-side comparison of K4RAH086VB-BCWM by Samsung Electronics and K4RAH165VB-BIQK by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Active
Specification Comparison
| Parameter | K4RAH086VB-BCWM | K4RAH165VB-BIQK |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.55 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Organization | 2G x 8 | 1G x 16 |
| Data Rate | 5600 Mbps | 4800 Mbps (MT/s) |
| Supply Voltage | 1.1 V | — |
| Interface | DDR5 (parallel) | — |
| Package | FBGA-82 | [DATA_NEEDED: exact package ball count / FBGA designation] |
| Mounting Type | Surface Mount | — |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Operating Temperature | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| RoHS Status | Compliant | — |
| Lifecycle Status | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 16 Gb |
| Supply Voltage (VDD) | — | 1.1 V |
| On-Die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| DLL Enabled Mode | — | Yes (spec mode per datasheet) |
| Brand | — | Samsung Semiconductor |