K4RAH086VB-BCWM vs K4RHE086VB-BCWM Comparison
Detailed side-by-side comparison of K4RAH086VB-BCWM by Samsung Electronics and K4RHE086VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ Active
Specification Comparison
| Parameter | K4RAH086VB-BCWM | K4RHE086VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $44.55 | $7.65 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Memory Size | 16 Gb | — |
| Organization | 2G x 8 | 2G x 8 |
| Data Rate | 5600 Mbps | 5600 Mbps |
| Supply Voltage | 1.1 V | 1.1 V |
| Interface | DDR5 (parallel) | DDR5 (JEDEC) |
| Package | FBGA-82 | 82 FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | DRAM (volatile) | — |
| Speed Grade | BCWM | — |
| Operating Temperature | Commercial temperature range (per datasheet) | [DATA_NEEDED: operating temperature range] |
| ECC | On-die ECC | — |
| Burst Length | 32 (BL32, DDR5 standard) | — |
| RoHS Status | Compliant | unknown |
| Lifecycle Status | Active | — |
| Sub-channel Architecture | Dual independent 32-bit sub-channels (per DDR5 spec) | — |
| Density | — | 24 Gb |
| Configuration | — | x8 |
| Application Segment | — | Server / Data Center / Premium PC |
| Manufacturer | — | Samsung Semiconductor |
| Access Time / CAS Latency | — | [DATA_NEEDED: CAS latency] |
| On-Die ECC | — | [DATA_NEEDED: on-die ECC support] |
| Package Height | — | [DATA_NEEDED: package height] |