K4RAH086VB-BIQK vs K4RAH086VP-BCWM Comparison
Detailed side-by-side comparison of K4RAH086VB-BIQK by Samsung Electronics and K4RAH086VP-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4RAH086VB-BIQK | K4RAH086VP-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.25 | $0.00 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| Organization | 2G x 8 | — |
| Data Rate | 4800 Mbps/pin | 5600 Mbps/pin |
| Core Supply Voltage | 1.1 V (nominal) | — |
| Package | 82FBGA | [DATA_NEEDED: exact FBGA package code and body size] |
| Configuration | X8 | — |
| Speed Grade | BIQK (-BIQK bin) | — |
| ECC | On-die ECC (DDR5 standard) | — |
| Interface | DDR5 (CA reduced pin count) | Parallel |
| Burst Length | 16 / 32 | — |
| Operating Mode | DLL enabled | — |
| RoHS Status | Compliant (Lead-Free & Halogen-Free per Samsung 82FBGA) | unknown |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| CAS Latency | [DATA_NEEDED: CAS latency (CL)] | — |
| Refresh | [DATA_NEEDED: refresh rate specification] | — |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | [DATA_NEEDED: moisture sensitivity level] |
| Memory Size | — | 16 Gb |
| Memory Organization | — | 2G x 8 |
| Supply Voltage | — | 1.1 V |
| Technology | — | DRAM DDR5 |
| Memory Format | — | DRAM |
| Volatile / Non-Volatile | — | Volatile |
| Mounting Type | — | Surface Mount |
| Packaging | — | Tray |
| Application Segment | — | Industrial |
| Lifecycle Status | — | Active |