K4RAH086VB-BIWM vs K4RAH086VB-BCWM Comparison
Detailed side-by-side comparison of K4RAH086VB-BIWM by Samsung Electronics and K4RAH086VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ ActiveSpecification Comparison
| Parameter | K4RAH086VB-BIWM | K4RAH086VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.85 | $44.55 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| Data Rate | 5600 Mbps per pin | 5600 Mbps |
| Organization | [DATA_NEEDED: organization x4/x8] | 2G x 8 |
| Supply Voltage | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| Mounting Type | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| Operating Temperature | [DATA_NEEDED: temperature range] | Commercial temperature range (per datasheet) |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| Memory Size | — | 16 Gb |
| Interface | — | DDR5 (parallel) |
| Package | — | FBGA-82 |
| Technology | — | DRAM (volatile) |
| Speed Grade | — | BCWM |
| ECC | — | On-die ECC |
| Burst Length | — | 32 (BL32, DDR5 standard) |
| Lifecycle Status | — | Active |
| Sub-channel Architecture | — | Dual independent 32-bit sub-channels (per DDR5 spec) |