K4RAH086VB-BIWM vs K4RAH086VB-BCWM 对比
详细并排对比 K4RAH086VB-BIWM 出自 Samsung Electronics 和 K4RAH086VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4RAH086VB-BCWM - DDR5 16Gb 5600Mbps SDRAM | Samsung Semiconductor
K4RAH086VB-BCWM ✓ 量产中规格对比
| 参数 | K4RAH086VB-BIWM | K4RAH086VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | DRAM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.85 | $44.55 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| 数据速率 | 5600 Mbps per pin | 5600 Mbps |
| 存储组织 | [DATA_NEEDED: organization x4/x8] | 2G x 8 |
| 电源电压 | [DATA_NEEDED: VDD voltage] | 1.1 V |
| Package Type | [DATA_NEEDED: package (FBGA, ball count)] | — |
| 安装类型 | Surface Mount | Surface Mount |
| Bank Groups | [DATA_NEEDED: bank group count] | — |
| CAS Latency (CWL) | Programmable (per Samsung DDR5 16Gb B-die spec) | — |
| DLL | DLL Enabled mode operation | — |
| On-Die Termination | Yes (via Mode Register setting) | — |
| Internal Calibration | Yes (via MPC) | — |
| Asynchronous Reset | Yes | — |
| Posted CAS | Yes | — |
| 工作温度 | [DATA_NEEDED: temperature range] | Commercial temperature range (per datasheet) |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Data Rate (family, per spec Rev1.0) | 4800 Mbps per pin (DDR5-4800, general applications) | — |
| 存储容量 | — | 16 Gb |
| 接口 | — | DDR5 (parallel) |
| 封装 | — | FBGA-82 |
| Technology | — | DRAM (volatile) |
| Speed Grade | — | BCWM |
| ECC | — | On-die ECC |
| Burst Length | — | 32 (BL32, DDR5 standard) |
| 生命周期状态 | — | Active |
| Sub-channel Architecture | — | Dual independent 32-bit sub-channels (per DDR5 spec) |