K4RAH165VB-BIWM vs K4RAH165VB-BCQK Comparison

Detailed side-by-side comparison of K4RAH165VB-BIWM by Samsung Electronics and K4RAH165VB-BCQK by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4RAH165VB-BIWM K4RAH165VB-BIWM - 16Gb DDR5 1Gx16 5600Mbps DRAM | Samsung

K4RAH165VB-BIWM - 16Gb DDR5 1Gx16 5600Mbps DRAM | Samsung

K4RAH165VB-BIWM ✓ Active
Samsung Electronics
K4RAH165VB-BCQK K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK ✓ Active

Specification Comparison

Parameter K4RAH165VB-BIWM K4RAH165VB-BCQK
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.00
Memory Type DDR5 SDRAM DDR5 SDRAM
Density 16 Gb —
Organization 1G x 16 —
Data Rate 5600 Mbps 4800 Mbps
Supply Voltage 1.1 V —
Package 106-ball FBGA 106-ball FBGA
Operating Temperature 0C to +85C 0C to +85C
On-Die ECC Yes (per K4RAH165VB family datasheet) —
Self Refresh Auto self-refresh —
Reset Function Asynchronous reset —
Write Leveling Yes —
CRC Function Yes —
ZQ Calibration Yes —
DLL DLL enabled mode of operation (per datasheet) —
Mounting Type Surface Mount Surface Mount
Standard Packaging 1000 units —
RoHS Status Compliant (per JLCPCB listing for K4RAH165VB-BCWM, same family) [DATA_NEEDED: RoHS status]
Memory Size — 16 Gb
Memory Organization — 1G x 16
Memory Interface — Parallel
Supply Voltage (VDD) — 1.1 V
Error Correction — On-die ECC
Features — Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration
Memory Format — DRAM (volatile)
Packaging — Tray
Lifecycle Status — Active
Unit Price — [DATA_NEEDED: unit price]

Datasheets & Resources

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