K4RAH165VB-BIWM vs K4RAH165VB-BCQK 对比
详细并排对比 K4RAH165VB-BIWM 出自 Samsung Electronics 和 K4RAH165VB-BCQK 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RAH165VB-BIWM | K4RAH165VB-BCQK |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| Density | 16 Gb | — |
| 存储组织 | 1G x 16 | — |
| 数据速率 | 5600 Mbps | 4800 Mbps |
| 电源电压 | 1.1 V | — |
| 封装 | 106-ball FBGA | 106-ball FBGA |
| 工作温度 | 0C to +85C | 0C to +85C |
| On-Die ECC | Yes (per K4RAH165VB family datasheet) | — |
| Self Refresh | Auto self-refresh | — |
| Reset Function | Asynchronous reset | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| DLL | DLL enabled mode of operation (per datasheet) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Standard Packaging | 1000 units | — |
| RoHS 状态 | Compliant (per JLCPCB listing for K4RAH165VB-BCWM, same family) | [DATA_NEEDED: RoHS status] |
| 存储容量 | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Supply Voltage (VDD) | — | 1.1 V |
| Error Correction | — | On-die ECC |
| 特性 | — | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration |
| Memory Format | — | DRAM (volatile) |
| Packaging | — | Tray |
| 生命周期状态 | — | Active |
| Unit Price | — | [DATA_NEEDED: unit price] |