K4RHE086VP vs K4RHE165VB-BCWM Comparison

Detailed side-by-side comparison of K4RHE086VP by Samsung Electronics and K4RHE165VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4RHE086VP K4RHE086VP - Samsung 24Gb DDR5 DRAM | Samsung Electronics

K4RHE086VP - Samsung 24Gb DDR5 DRAM | Samsung Electronics

K4RHE086VP ✓ Active
Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM ✓ Active

Specification Comparison

Parameter K4RHE086VP K4RHE165VB-BCWM
Brand Samsung Electronics Samsung Electronics
Category DDR5 Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $9.90 $0.00
Memory Type DDR5 SDRAM DDR5 SDRAM
Density 24 Gb 24 Gb (3 GB)
Organization x8 1G x 16
Process Node 1a-class (D1a) —
Package Type FBGA —
Mounting Type Surface Mount Surface Mount (BGA)
Interface Type DDR5 (double data rate 5) —
Maximum Data Rate [DATA_NEEDED: speed bin data rate] —
Supply Voltage (VDD) [DATA_NEEDED: VDD in V] —
On-Die ECC Yes (DDR5 standard feature) —
Bank Groups [DATA_NEEDED: bank group count] —
Operating Temperature Range [DATA_NEEDED: temperature range] —
Brand Samsung Electronics —
Product Family Samsung K4RHE DDR5 series —
Typical Application Server / client DRAM modules —
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Data Rate — 5600 Mbps
Supply Voltage — 1.1 V
Package — 106 FBGA
Operating Temperature — 0 to 85 C
Product Status — Mass Production
Interface — DDR5 (parallel, DDR)
Access Type — Synchronous
Clock Rate (nominal) — 2800 MHz (5600 MT/s DDR)
Ball Count — 106
MSL Level — [DATA_NEEDED: MSL Level]
Standard Pack Quantity — [DATA_NEEDED: Standard Pack Quantity]

Datasheets & Resources

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