K4RHE165VB-BCWM vs K4RAH165VB-BCWM Comparison
Detailed side-by-side comparison of K4RHE165VB-BCWM by Samsung Electronics and K4RAH165VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung
K4RHE165VB-BCWM ✓ ActiveSpecification Comparison
| Parameter | K4RHE165VB-BCWM | K4RAH165VB-BCWM |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $9.92 |
| Memory Type | DDR5 SDRAM | DDR5 SDRAM (volatile DRAM) |
| Density | 24 Gb (3 GB) | — |
| Organization | 1G x 16 | — |
| Data Rate | 5600 Mbps | — |
| Supply Voltage | 1.1 V | 1.1 V |
| Package | 106 FBGA | FBGA-106 |
| Mounting Type | Surface Mount (BGA) | Surface Mount |
| Operating Temperature | 0 to 85 C | 0C to +85C |
| Product Status | Mass Production | — |
| Interface | DDR5 (parallel, DDR) | — |
| Access Type | Synchronous | — |
| Clock Rate (nominal) | 2800 MHz (5600 MT/s DDR) | — |
| Ball Count | 106 | — |
| RoHS Status | [DATA_NEEDED: RoHS Status] | Compliant |
| MSL Level | [DATA_NEEDED: MSL Level] | — |
| Standard Pack Quantity | [DATA_NEEDED: Standard Pack Quantity] | — |
| Memory Size | — | 16 Gb |
| Memory Organization | — | 1G x 16 |
| Memory Interface | — | Parallel |
| Technology | — | DDR5 |
| Maximum Data Rate (DDR5 family) | — | up to 7200 Mbps |
| On-die ECC | — | Yes |
| Auto Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| ZQ Calibration | — | Yes |
| Speed Grade (suffix BCWM) | — | [DATA_NEEDED: speed grade / CAS latency] |
| Packaging | — | Tray |