K4S561633FZN75 vs K4S561633F-ZL75 Comparison
Detailed side-by-side comparison of K4S561633FZN75 by Samsung Electronics and K4S561633F-ZL75 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung
K4S561633FZN75 NrndSamsung Electronics
K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA
K4S561633F-ZL75 NrndSpecification Comparison
| Parameter | K4S561633FZN75 | K4S561633F-ZL75 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | NRND | NRND |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.52 | $2.50 |
| Memory Type | Mobile SDRAM (Synchronous DRAM) | Synchronous DRAM (Mobile SDRAM) |
| Density | 256 Mbit (268,435,456 bits) | 256 Mbit (268,435,456 bits) |
| Organization | 4 banks x 4,196,304 words x 16 bits | 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) |
| Clock Frequency | 133 MHz | — |
| Data Rate | PC133 (SDRAM) | — |
| Supply Voltage (VDD/VDDQ) | 3.0 V (typ); 2.7 V-3.3 V range | — |
| Interface | LVCMOS | — |
| CAS Latency | Programmable, 2 or 3 | Programmable, 2 or 3 |
| Burst Length | 1, 2, 4, 8, full page (programmable) | 1, 2, 4, 8, Full Page |
| Package | 54-ball FBGA (54BOC) | 54-ball FBGA (54-BOC) / TFBGA |
| Operating Temperature | Commercial grade (per -ZN75 suffix) | [DATA_NEEDED: operating temperature grade] |
| Process Technology | Samsung high-performance CMOS | — |
| Refresh | Auto-Refresh and Self-Refresh | — |
| Power Modes | Power-Down mode, Partial Array Self-Refresh (PASR) | — |
| Lead-Free / RoHS | Pb-free (lead-free) - per '-ZN' suffix | — |
| Bank Architecture | 4 internal banks | — |
| Row Address | A0-A12 (13-bit) | — |
| Data Width | x16 (DQ0-DQ15) | — |
| Operating Frequency (max) | — | 133 MHz |
| Clock Access Time | — | 5.4 ns |
| Speed Grade | — | ZL75 (7.5 ns / CAS Latency 3, 133 MHz) |
| Supply Voltage (VDD) | — | 3.3 V |
| I/O Standard | — | LVCMOS-compatible |
| Number of Banks | — | 4 |
| Burst Type | — | Sequential or Interleave |
| Mounting Type | — | Surface Mount |
| RoHS / Lead-Free | — | Pb-Free (per -L75 suffix) |