K4S561633FZN75 vs K4S561633F-ZL75 对比
详细并排对比 K4S561633FZN75 出自 Samsung Electronics 和 K4S561633F-ZL75 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung
K4S561633FZN75 NrndSamsung Electronics
K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA
K4S561633F-ZL75 Nrnd规格对比
| 参数 | K4S561633FZN75 | K4S561633F-ZL75 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 不推荐新设计 | 不推荐新设计 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.52 | $2.50 |
| 存储器类型 | Mobile SDRAM (Synchronous DRAM) | Synchronous DRAM (Mobile SDRAM) |
| Density | 256 Mbit (268,435,456 bits) | 256 Mbit (268,435,456 bits) |
| 存储组织 | 4 banks x 4,196,304 words x 16 bits | 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) |
| Clock Frequency | 133 MHz | — |
| 数据速率 | PC133 (SDRAM) | — |
| Supply Voltage (VDD/VDDQ) | 3.0 V (typ); 2.7 V-3.3 V range | — |
| 接口 | LVCMOS | — |
| CAS 延迟 | Programmable, 2 or 3 | Programmable, 2 or 3 |
| Burst Length | 1, 2, 4, 8, full page (programmable) | 1, 2, 4, 8, Full Page |
| 封装 | 54-ball FBGA (54BOC) | 54-ball FBGA (54-BOC) / TFBGA |
| 工作温度 | Commercial grade (per -ZN75 suffix) | [DATA_NEEDED: operating temperature grade] |
| Process Technology | Samsung high-performance CMOS | — |
| Refresh | Auto-Refresh and Self-Refresh | — |
| Power Modes | Power-Down mode, Partial Array Self-Refresh (PASR) | — |
| Lead-Free / RoHS | Pb-free (lead-free) - per '-ZN' suffix | — |
| Bank Architecture | 4 internal banks | — |
| Row Address | A0-A12 (13-bit) | — |
| Data Width | x16 (DQ0-DQ15) | — |
| Operating Frequency (max) | — | 133 MHz |
| Clock Access Time | — | 5.4 ns |
| Speed Grade | — | ZL75 (7.5 ns / CAS Latency 3, 133 MHz) |
| Supply Voltage (VDD) | — | 3.3 V |
| I/O Standard | — | LVCMOS-compatible |
| Number of Banks | — | 4 |
| Burst Type | — | Sequential or Interleave |
| 安装类型 | — | Surface Mount |
| RoHS / Lead-Free | — | Pb-Free (per -L75 suffix) |