K4S561633FZN75 vs K4S561633F-ZL75 Comparaison
Comparaison détaillée côte à côte de K4S561633FZN75 par Samsung Electronics et K4S561633F-ZL75 par Samsung Electronics. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Samsung Electronics
K4S561633FZN75 - 256Mb Mobile SDRAM 4x16Mx16 133MHz FBGA | Samsung
K4S561633FZN75 NrndSamsung Electronics
K4S561633F-ZL75 - 256Mb Mobile SDRAM, 4x16Mx16, 133MHz, 54-BGA
K4S561633F-ZL75 NrndComparaison des spécifications
| Paramètre | K4S561633FZN75 | K4S561633F-ZL75 |
|---|---|---|
| Marque | Samsung Electronics | Samsung Electronics |
| Catégorie | Memory ICs | Memory ICs |
| Statut du cycle de vie | NRND | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $2,52 | $2,50 |
| Type de mémoire | Mobile SDRAM (Synchronous DRAM) | Synchronous DRAM (Mobile SDRAM) |
| Density | 256 Mbit (268,435,456 bits) | 256 Mbit (268,435,456 bits) |
| Organisation de la mémoire | 4 banks x 4,196,304 words x 16 bits | 4 banks x 4,196,304 words x 16 bits (4M x 16 x 4 banks) |
| Clock Frequency | 133 MHz | — |
| Débit de données | PC133 (SDRAM) | — |
| Supply Voltage (VDD/VDDQ) | 3.0 V (typ); 2.7 V-3.3 V range | — |
| Interface | LVCMOS | — |
| Latence CAS | Programmable, 2 or 3 | Programmable, 2 or 3 |
| Burst Length | 1, 2, 4, 8, full page (programmable) | 1, 2, 4, 8, Full Page |
| Boîtier | 54-ball FBGA (54BOC) | 54-ball FBGA (54-BOC) / TFBGA |
| Température de fonctionnement | Commercial grade (per -ZN75 suffix) | [DATA_NEEDED: operating temperature grade] |
| Process Technology | Samsung high-performance CMOS | — |
| Refresh | Auto-Refresh and Self-Refresh | — |
| Power Modes | Power-Down mode, Partial Array Self-Refresh (PASR) | — |
| Lead-Free / RoHS | Pb-free (lead-free) - per '-ZN' suffix | — |
| Bank Architecture | 4 internal banks | — |
| Row Address | A0-A12 (13-bit) | — |
| Data Width | x16 (DQ0-DQ15) | — |
| Operating Frequency (max) | — | 133 MHz |
| Clock Access Time | — | 5.4 ns |
| Speed Grade | — | ZL75 (7.5 ns / CAS Latency 3, 133 MHz) |
| Supply Voltage (VDD) | — | 3.3 V |
| I/O Standard | — | LVCMOS-compatible |
| Number of Banks | — | 4 |
| Burst Type | — | Sequential or Interleave |
| Type de montage | — | Surface Mount |
| RoHS / Lead-Free | — | Pb-Free (per -L75 suffix) |