K6F1616U6A-EF55T - 16Mbit Async SRAM 55ns 48-TFBGA | Samsung
MPN: K6F1616U6A-EF55T β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K6F1616U6A-EF55T β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K6F1616U6A-EF55
β Drop-Inπ Reference alternative (not in catalog)
K6F1616U6A-EF55T Maximum Ratings & Electrical Characteristics
| Memory Type | SRAM - Asynchronous |
| Memory Size | 16 Mbit |
| Organization | 1M x 16 |
| Interface | Parallel |
| Access Time | 55 ns |
| Supply Voltage Range | 2.7 V to 3.3 V |
| Technology | Full CMOS Static RAM |
| Package | 48-TFBGA (7.5 x 9.5 mm) |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (T suffix) |
| Clock Frequency | N/A (asynchronous, no clock required) |
| Refresh Requirement | None (static RAM) |
K6F1616U6A-EF55T 48-tfbga (7.5 x 9.5 mm) Pin Configuration Guide
Complete pinout information for K6F1616U6A-EF55T (48-tfbga (7.5 x 9.5 mm) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K6F1616U6A-EF55T.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K6F1616U6A-EF55T is suitable for 6 applications: Battery-Powered Portable Instrumentation, Industrial Control and PLC Data Buffers, Legacy SRAM Replacement in Embedded Designs, Networking Line-Card Buffer Memory, Medical and Test Instrumentation Data Storage, FPGA Reference Design Scratchpad.
Battery-Powered Portable Instrumentation
The K6F1616U6A-EF55T is a strong fit for battery-powered instruments because Samsung designs the K6F1616U6A family as a super-low-power, low-voltage full-CMOS static RAM operating from 2.7V to 3.3V - directly compatible with a 3.0V lithium cell or 3.3V rail without a regulator stage. Its asynchronous architecture needs no clock or refresh, so a microcontroller can clock-gate the bus and drop the part into standby simply by deselecting chip enable. The 1M x16 organization supplies 2MB of fast scratchpad or data-logging memory with deterministic 55ns access. The 48-TFBGA (7.5 x 9.5 mm) footprint keeps handheld and portable PCBs compact.
Recommended
Industrial Control and PLC Data Buffers
In PLCs, motor control panels, and factory automation controllers, the K6F1616U6A-EF55T provides 2MB of deterministic, zero-refresh working memory between the microprocessor and process I/O. The 55ns access time supports zero or single wait-state operation from industrial-grade MCUs and FPGAs, while the parallel 16-bit bus lets controllers move logged events and setpoint tables efficiently. Full-CMOS cells tolerate the wide temperature swings typical of factory floors without refresh-related data loss risk, and the wide 2.7V to 3.3V input range rides through supply sag on 3.3V industrial logic rails.
Recommended
Legacy SRAM Replacement in Embedded Designs
Many legacy embedded designs were built around Samsung's K6X0808/K6X1008 TSOP SRAM families or other 16Mbit-class asynchronous SRAMs that are now in constrained supply. The K6F1616U6A-EF55T provides the same asynchronous, no-refresh interface paradigm in a modern low-voltage full-CMOS die, letting designers extend product life with a parameter-matched 1M x16, 55ns device. Migration typically requires only address/data remapping to the 48-TFBGA ball map and verification that the host tolerates the 2.7V to 3.3V range, since some older TSOP parts ran at 4.5V to 5.5V.
Recommended
Networking Line-Card Buffer Memory
Network equipment such as switches, routers, and DSLAM line cards uses asynchronous SRAM for statistics counters, queuing tables, and control-plane buffers. The K6F1616U6A-EF55T's 55ns access and 1M x16 organization suit 16-bit-wide counter and descriptor tables that must be read-modify-written quickly without the added controller complexity of synchronous SRAM pipelines. The 2.7V to 3.3V supply integrates with standard 3.3V backplane logic, and the compact 48-TFBGA (7.5 x 9.5 mm) ball-grid array allows dense placement under BGA network processors where TSOP height and clearance are limited.
Recommended
Medical and Test Instrumentation Data Storage
Portable medical monitors and bench instruments require volatile working memory with deterministic timing for waveform capture, calibration tables, and sensor buffering. The K6F1616U6A-EF55T delivers 2MB of 55ns asynchronous storage with no refresh cycles, so a real-time loop is never stalled by memory housekeeping - an important factor in sampling systems with hard deadlines. Its full-CMOS construction minimizes average current draw in battery or patient-worn devices, and the low 2.7V floor allows operation from a single 3.0V cell through discharge, simplifying the power tree versus 5V-class legacy SRAM.
Recommended
FPGA Reference Design Scratchpad
FPGA-based systems frequently attach external asynchronous SRAM as a scratchpad for soft-processor heaps, video line buffers, or DSP working arrays. The K6F1616U6A-EF55T's parallel 16-bit asynchronous interface maps directly onto a simple FPGA memory controller built from chip enable, output enable, and write enable strobes - no clock-domain logic or refresh sequencer is required. At 55ns, a 50MHz FPGA fabric can complete one access every few cycles without wait-state gymnastics. The 48-TFBGA footprint sits cleanly beside BGA-packaged FPGAs such as the Microsemi families used in industrial and aerospace boards.
Recommended
Recommended Products Summary
Engineering reference data for K6F1616U6A-EF55T β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K6F1616U6A-EF55 |
|---|---|---|
| Package | 48-TFBGA (7.5 x 9.5 mm) | 48-TFBGA (7.5 x 9.5 mm) - same |
| Brand | Samsung Electronics | Samsung Electronics |
| Memory Size | 16 Mbit | 16 Mbit |
| Organization | 1M x 16 | 1M x 16 |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 2.7 V to 3.3 V | 2.7 V to 3.3 V |
| Packaging / Delivery | Tape & Reel (T suffix) | Tray |
| Unit Price (qty 1) | [DATA_NEEDED] | [DATA_NEEDED] |
Key Differentiators
- Fastest speed grade in the family (vs K6F2016U4E-EF70T)
- Compact ball-grid footprint (vs K6X0808C1D-GF55T)
- Supply-chain flexibility via tray variant (vs K6F1616U6A-EF55)
Design Notes
At the 55ns access grade, bus timing is the dominant risk. Budget the full address-valid-to-data-valid delay plus output-enable access time and host setup/hold margins; avoid assuming 55ns end-to-end. Keep TFBGA escape traces under 50mm and route address/data as a loosely length-matched group. Add 0.1uF plus 10uF ceramic decoupling within 2mm of the VDD/GND ball pair, and series-terminate address lines longer than 80mm to control ringing on 3.3V CMOS edges.
The 48-TFBGA (7.5 x 9.5 mm) ball map requires a dedicated land pattern; do not reuse TSOP or other BGA footprints. Follow the Samsung datasheet land-pattern appendix for pad diameter and mask openings, and fan out with via-in-pad or dog-bone escapes as board thickness dictates. Verify the ball map directly against the official datasheet ball assignment table before release - distributor summaries do not carry per-ball detail, and pinout accuracy must come from the manufacturer document.
Estimated: an asynchronous full-CMOS SRAM at this density draws negligible average power in standby (device deselected); the main consumption occurs during access cycles. Size the 3.3V rail using the datasheet operating current at your actual cycle rate rather than worst-case datasheet maxima, and confirm exact standby/operating microamp values from the Samsung K6F1616U6A datasheet DC table, as precise values were not published in the retrieved distributor data.
Compliance Information
Compliance data was not included in the retrieved distributor summaries. Verify RoHS/REACH status on the Samsung Semiconductor official product page or the distributor environmental data sheet before procurement.
