K6F3216U6M-EF70T vs K6F2016U4D-FF70T00 Comparison
Detailed side-by-side comparison of K6F3216U6M-EF70T by Samsung Electronics and K6F2016U4D-FF70T00 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung
K6F2016U4D-FF70T00 ✓ ActiveSpecification Comparison
| Parameter | K6F3216U6M-EF70T | K6F2016U4D-FF70T00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.10 | $2.05 |
| Memory Type | SRAM - Asynchronous | Asynchronous SRAM |
| Memory Size | 32 Mbit | 2 Mbit |
| Organization | 2M x 16 | 128K x 16 |
| Supply Voltage | 3 V | — |
| Access Time | 55 ns | — |
| Interface | Parallel | Parallel |
| Technology | Full CMOS Static RAM | Full CMOS |
| Package | 55-TFBGA (7.5 x 12 mm) | 48-FBGA (6x7 mm) chip-scale package |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: Operating Temperature Range] | Industrial temperature range |
| Speed Grade | -EF70 (55 ns) | — |
| Standard Pack Qty | 2400 | — |
| RoHS Status | NO (per third-party listing) | [DATA_NEEDED: RoHS status] |
| Memory Composition | Volatile SRAM | — |
| Refresh Requirement | None (static memory) | — |
| Access Time (tAA) | — | 70 ns |
| Supply Voltage (Vcc) | — | 2.7 V to 3.3 V |
| Write Cycle Time (tWP) | — | 50 ns |
| Speed Grades in Family | — | 55 ns, 70 ns |
| Power Feature | — | Super low power and low voltage |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |