K6F3216U6M-EF70T vs K6F2016U4D-FF70T00 对比
详细并排对比 K6F3216U6M-EF70T 出自 Samsung Electronics 和 K6F2016U4D-FF70T00 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K6F2016U4D-FF70T00 - 2Mbit Async SRAM 70ns 48-FBGA | Samsung
K6F2016U4D-FF70T00 ✓ 量产中规格对比
| 参数 | K6F3216U6M-EF70T | K6F2016U4D-FF70T00 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.10 | $2.05 |
| 存储器类型 | SRAM - Asynchronous | Asynchronous SRAM |
| 存储容量 | 32 Mbit | 2 Mbit |
| 存储组织 | 2M x 16 | 128K x 16 |
| 电源电压 | 3 V | — |
| Access Time | 55 ns | — |
| 接口 | Parallel | Parallel |
| Technology | Full CMOS Static RAM | Full CMOS |
| 封装 | 55-TFBGA (7.5 x 12 mm) | 48-FBGA (6x7 mm) chip-scale package |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: Operating Temperature Range] | Industrial temperature range |
| Speed Grade | -EF70 (55 ns) | — |
| Standard Pack Qty | 2400 | — |
| RoHS 状态 | NO (per third-party listing) | [DATA_NEEDED: RoHS status] |
| Memory Composition | Volatile SRAM | — |
| Refresh Requirement | None (static memory) | — |
| Access Time (tAA) | — | 70 ns |
| Supply Voltage (Vcc) | — | 2.7 V to 3.3 V |
| Write Cycle Time (tWP) | — | 50 ns |
| Speed Grades in Family | — | 55 ns, 70 ns |
| Power Feature | — | Super low power and low voltage |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Operating Current | — | [DATA_NEEDED: operating current] |