K6X0808C1D-BF55 vs K6X0808C1D-BF70 Comparison
Detailed side-by-side comparison of K6X0808C1D-BF55 by Samsung Electronics and K6X0808C1D-BF70 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ ActiveSpecification Comparison
| Parameter | K6X0808C1D-BF55 | K6X0808C1D-BF70 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | DRAM | Memory ICs |
| Lifecycle Status | Active | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $1.85 |
| Memory Type | Asynchronous SRAM | Asynchronous SRAM (CMOS) |
| Memory Size | 256 Kbit | — |
| Organization | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 70 ns |
| Interface | Parallel | Parallel |
| Supply Voltage | 5 V | [DATA_NEEDED: Supply Voltage] |
| Technology | CMOS | CMOS |
| Package | 28-SOP | 28-SOP (PDSO28) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +70C (commercial grade, BF suffix) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Memory Format | SRAM | — |
| Clock Frequency | N/A (asynchronous) | — |
| Refresh | Not required (static memory) | — |
| RoHS Status | unknown | [DATA_NEEDED: RoHS Status] |
| Density | — | 256 Kbit |
| Operating Current (active) | — | [DATA_NEEDED: Operating Current] |
| Standby Current (CMOS) | — | [DATA_NEEDED: Standby Current] |
| Data Retention | — | Volatile (battery-backup capable with CE control) |
| I/O Type | — | Tri-state, common I/O (DQ0-DQ7) |
| Address Bus | — | A0-A14 (15 address lines) |