K6X0808C1D-BF70 - 32Kx8 70ns Async SRAM | Samsung
MPN: K6X0808C1D-BF70 β End of Life| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.95 | $2.95 |
| 10 | $2.65 | $26.50 |
| 100 | $2.3 | $230.00 |
| 500 | $2.05 | $1,025.00 |
| 1,000 | $1.85 | $1,850.00 |
Drop-in alternatives for K6X0808C1D-BF70 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
K6X0808C1D-BF55
β Drop-Inβ In Stock
$1.85 / Unit
View Datasheet βK6X0808C1D-BF70T
β Drop-Inβ In Stock
$1.05 / Unit
View Datasheet βK6X0808C1D-GF70T00
β Drop-Inβ In Stock
$1.85 / Unit
View Datasheet βK6X0808C1D-BF70 Maximum Ratings & Electrical Characteristics
| Memory Type | Asynchronous SRAM (CMOS) |
| Density | 256 Kbit |
| Organization | 32K x 8 |
| Access Time | 70 ns |
| Interface | Parallel |
| Technology | CMOS |
| Package | 28-SOP (PDSO28) |
| Mounting Type | Surface Mount |
| Operating Temperature | 0C to +70C (commercial grade, BF suffix) |
| Control Signals | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) |
| Address Bus | A0-A14 (15 address lines) |
K6X0808C1D-BF70 Pin Configuration
| Pin 1 | A14 β Address input bit 14 (MSB) |
| Pin 2 | A12 β Address input bit 12 |
| Pin 3 | A7 β Address input bit 7 |
| Pin 4 | A6 β Address input bit 6 |
| Pin 5 | A5 β Address input bit 5 |
| Pin 6 | A4 β Address input bit 4 |
| Pin 7 | A3 β Address input bit 3 |
| Pin 8 | A2 β Address input bit 2 |
| Pin 9 | A1 β Address input bit 1 |
| Pin 10 | A0 β Address input bit 0 (LSB) |
| Pin 11 | DQ0 β Data input/output bit 0 |
| Pin 12 | DQ1 β Data input/output bit 1 |
| Pin 13 | DQ2 β Data input/output bit 2 |
| Pin 14 | GND β Ground |
| Pin 15 | DQ3 β Data input/output bit 3 |
| Pin 16 | DQ4 β Data input/output bit 4 |
| Pin 17 | DQ5 β Data input/output bit 5 |
| Pin 18 | DQ6 β Data input/output bit 6 |
| Pin 19 | DQ7 β Data input/output bit 7 (MSB) |
| Pin 20 | CE β Chip enable (active low) |
| Pin 21 | A10 β Address input bit 10 |
| Pin 22 | OE β Output enable (active low) |
| Pin 23 | A11 β Address input bit 11 |
| Pin 24 | A9 β Address input bit 9 |
| Pin 25 | A8 β Address input bit 8 |
| Pin 26 | A13 β Address input bit 13 |
| Pin 27 | WE β Write enable (active low) |
| Pin 28 | VCC β Power supply |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K6X0808C1D-BF70 is suitable for 6 applications: Embedded 8-bit MCU Scratchpad Memory, Industrial Instrumentation Data Buffer, Battery-Backed Data Retention, Telecom and Line-Card Memory, Test and Measurement Equipment, Legacy Board Repair and Last-Time Buy.
Embedded 8-bit MCU Scratchpad Memory
The K6X0808C1D-BF70 fits directly onto 8051-family and similar 8-bit microcontroller buses as external data memory: its 32K x 8 byte-wide organization, standard CE/OE/WE controls, and 70 ns access time eliminate glue logic and keep firmware simple. Placed on the multiplexed or demultiplexed address bus with A0-A14 and DQ0-DQ7, it provides a zero-refresh volatile workspace far faster to integrate than DRAM. The 70 ns budget accommodates typical 12 MHz to 33 MHz 8051 cycles with modest wait states, and CMOS standby via CE deselect keeps idle power low in always-on controllers.
Recommended
Industrial Instrumentation Data Buffer
Industrial instruments - meters, data loggers, and process controllers - use the K6X0808C1D-BF70 as a FIFO-style acquisition buffer between ADCs and slower processing or communications stages. The byte-wide 32K x 8 array holds roughly 32,000 samples, while the 70 ns asynchronous interface keeps up with moderate sampling clocks without handshake complexity. Operation in electrically noisy factory environments benefits from the fully static CMOS cell's noise margin, and tri-state DQ outputs allow the same bus to be shared with EEPROM or a real-time clock. Designers should deselect CE during power transients to protect buffer contents on supervised rails.
Recommended
Battery-Backed Data Retention
Because the K6X0808C1D-BF70 is a fully static CMOS SRAM, it retains data whenever VCC remains valid, making it a natural fit for battery-backed settings, counters, and audit logs in meters, access-control panels, and medical devices. A supervisory circuit switches to a lithium cell on main-power loss while holding CE deselected, dropping the array into CMOS standby so a coin cell can hold memory contents for years - the exact figure depends on the datasheet standby current. Unlike EEPROM, writes are fast (a single WE pulse) and there is no write-endurance limit, ideal for frequently updated parameters.
Recommended
Telecom and Line-Card Memory
Legacy telecom line cards, modems, and T1/E1 framer support logic used byte-wide asynchronous SRAMs such as the K6X0808C1D-BF70 for channel maps, configuration tables, and statistics counters. The 70 ns access time comfortably serves 8-bit control buses clocked at 10-20 MHz, and the 28-SOP outline conserves board area on dense cards. Tri-state I/O supports shared-memory arbitration between the framer's DMA engine and the host microcontroller using simple CE/OE gating. For maintenance of deployed telecom hardware, the same-family BF55 grade is a drop-in upgrade path where faster refresh of channel tables is needed.
Recommended
Test and Measurement Equipment
Bench instruments, logic analyzers of the classic era, and automated test fixtures rely on the K6X0808C1D-BF70 as capture memory and coefficient storage. The deterministic 70 ns asynchronous timing simplifies state-machine design around sample capture - no refresh cycles can steal time from a measurement window. The 32K x 8 density suits oscilloscope-style single-channel capture at 8-bit resolution, and CMOS low standby current suits portable/handheld instruments running from batteries. Layout practice: keep address lines matched in length where capture timing matters, and decouple VCC at both corners of the 28-SOP package.
Recommended
Legacy Board Repair and Last-Time Buy
Service organizations maintaining installed fleets of industrial, telecom, and medical boards designed in the 1990s-2000s use the K6X0808C1D-BF70 for component-level repair, since original designs specified this exact Samsung 28-SOP part. Sourcing from residual distributor stock (DigiKey Marketplace, Ampheo, broker channels as of 2026-09-01) keeps proven hardware in service without redesign or requalification. Recommended practice is a last-time-buy sized to the fleet's predicted failure rate, with the K6X0808C1D-BF55 held as a pin-compatible fallback - its faster 55 ns timing satisfies every 70 ns socket requirement.
Recommended
Recommended Products Summary
Engineering reference data for K6X0808C1D-BF70 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K6X0808C1D-BF55 | K6X0808C1D-BF70T | K6X0808C1D-GF70T00 |
|---|---|---|---|---|
| Package | 28-SOP (PDSO28) | 28-SOP (PDSO28) - same | 28-SOP (PDSO28) - same | Same family, alternate package suffix - verify outline |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Density / Organization | 256 Kbit / 32K x 8 | 256 Kbit / 32K x 8 | 256 Kbit / 32K x 8 | 256 Kbit / 32K x 8 |
| Access Time | 70 ns | 55 ns (faster) | 70 ns | 70 ns |
| Interface | Asynchronous parallel | Asynchronous parallel | Asynchronous parallel | Asynchronous parallel |
| Technology | CMOS | CMOS | CMOS | CMOS |
| Temperature Grade | Commercial (0C to +70C) | Commercial (0C to +70C) | Commercial (0C to +70C) | [DATA_NEEDED] |
| Lifecycle Status | EOL (residual stock) | EOL (residual stock) | EOL (residual stock) | EOL (residual stock) |
Key Differentiators
- Fastest widely stocked grade of the K6X0808C1D BF package family for legacy sockets (vs K6X0808C1D-GF70T00)
- Timing margin headroom via faster drop-in (vs K6X0808C1D-BF55)
- Zero-refresh operation vs DRAM alternatives (vs K4S510432D-UC75 (SDRAM))
Design Notes
Deselect CE (hold high) through power-up and power-down transitions. CMOS SRAM cells can be corrupted or spurious writes latched if WE or CE glitch while the supply is outside the guaranteed operating range. Use a supervisor/reset IC to gate CE until the rail is stable, which is also the standard technique for battery-backup switchover. Never leave CE, OE, or WE floating - tie unused control inputs to VCC or GND through a pull resistor so the device stays deselected during firmware boot or bus reset.
Place a 0.1 uF ceramic decoupling capacitor within 3 mm of the VCC (pin 28) and GND (pin 14) pair, plus one bulk 4.7-10 uF capacitor per memory bank. On shared buses, keep the DQ0-DQ7 traces short and add series termination (22-33 ohm) near the driver if trace lengths exceed about 10 cm at fast edge rates, to control ringing on the tri-state outputs. Address lines may be routed as an unmatched group for asynchronous use, but avoid routing them adjacent to clock lines to prevent coupling-induced address errors.
Estimated: active current for a 5 V CMOS 256Kbit SRAM of this class is typically in the tens of mA range at 70 ns grade, while CMOS standby is in the microamp range per family datasheet conventions - confirm exact ICC/ISB1 values in the Samsung K6X0808C1D datasheet before finalizing the power budget. For battery-backed designs, the dominant battery drain is standby current times retention time, so keeping CE high (deselected) during idle periods extends coin-cell life by orders of magnitude versus a continuously selected device.
When interfacing to modern fast MCUs or FPGAs, remember the 70 ns tAA means a zero-wait-state 50 MHz+ bus (20 ns cycle) cannot read this part directly - insert wait states or run the memory bus at 10-14 MHz maximum. Data-float time after OE/CE deassertion must also be respected before another device drives the bus to avoid bus contention. For FPGA designs, generate the OE/WE strobes from clock edges with adequate hold margins rather than combinational address decoding alone.
Compliance Information
This is a legacy Samsung memory part predating modern RoHS declarations; compliance status must be confirmed with the supplier or Samsung's environmental data before use in new EU-market designs.
