K6X0808C1D-BF55 vs K6X0808C1D-BF70 对比
详细并排对比 K6X0808C1D-BF55 出自 Samsung Electronics 和 K6X0808C1D-BF70 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ 量产中规格对比
| 参数 | K6X0808C1D-BF55 | K6X0808C1D-BF70 |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | DRAM | Memory ICs |
| 生命周期状态 | 有效 | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.85 | $1.85 |
| 存储器类型 | Asynchronous SRAM | Asynchronous SRAM (CMOS) |
| 存储容量 | 256 Kbit | — |
| 存储组织 | 32K x 8 | 32K x 8 |
| Access Time | 55 ns | 70 ns |
| 接口 | Parallel | Parallel |
| 电源电压 | 5 V | [DATA_NEEDED: Supply Voltage] |
| Technology | CMOS | CMOS |
| 封装 | 28-SOP | 28-SOP (PDSO28) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | 0C to +70C (commercial grade, BF suffix) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Operating Current | [DATA_NEEDED: operating current] | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Memory Format | SRAM | — |
| Clock Frequency | N/A (asynchronous) | — |
| Refresh | Not required (static memory) | — |
| RoHS 状态 | unknown | [DATA_NEEDED: RoHS Status] |
| Density | — | 256 Kbit |
| Operating Current (active) | — | [DATA_NEEDED: Operating Current] |
| Standby Current (CMOS) | — | [DATA_NEEDED: Standby Current] |
| Data Retention | — | Volatile (battery-backup capable with CE control) |
| I/O Type | — | Tri-state, common I/O (DQ0-DQ7) |
| Address Bus | — | A0-A14 (15 address lines) |