K6X0808C1D-BF70 vs K6X0808C1D-GF70T00 Comparison
Detailed side-by-side comparison of K6X0808C1D-BF70 by Samsung Electronics and K6X0808C1D-GF70T00 by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung
K6X0808C1D-GF70T00 ✓ ActiveSpecification Comparison
| Parameter | K6X0808C1D-BF70 | K6X0808C1D-GF70T00 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electro-Mechanics |
| Category | Memory ICs | DRAM |
| Lifecycle Status | End of Life | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $1.85 |
| Memory Type | Asynchronous SRAM (CMOS) | SRAM - Asynchronous |
| Density | 256 Kbit | — |
| Organization | 32K x 8 | 32K x 8 |
| Access Time | 70 ns | 70 ns |
| Interface | Parallel | Parallel |
| Technology | CMOS | CMOS |
| Package | 28-SOP (PDSO28) | 28-SOP |
| Mounting Type | Surface Mount | Surface Mount |
| Supply Voltage | [DATA_NEEDED: Supply Voltage] | 5 V |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| Operating Temperature | 0C to +70C (commercial grade, BF suffix) | [DATA_NEEDED: operating temperature range] |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | Common Data I/O, TTL compatible |
| RoHS Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Address Bus | A0-A14 (15 address lines) | — |
| Memory Size | — | 256 Kbit |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: active current] |
| Clock / Refresh | — | Fully static, no clock or refresh required |
| Packaging | — | Tape & Reel (T00 suffix) |