K6X0808C1D-BF70 vs K6X0808C1D-GF70T00 Vergleich
Detaillierter Direktvergleich von K6X0808C1D-BF70 von Samsung Electronics und K6X0808C1D-GF70T00 von Samsung Electro-Mechanics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Samsung Electro-Mechanics
K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung
K6X0808C1D-GF70T00 ✓ AktivSpezifikationsvergleich
| Parameter | K6X0808C1D-BF70 | K6X0808C1D-GF70T00 |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electro-Mechanics |
| Kategorie | Memory ICs | DRAM |
| Lebenszyklusstatus | Ende des Lebenszyklus | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,85 | $1,85 |
| Speichertyp | Asynchronous SRAM (CMOS) | SRAM - Asynchronous |
| Density | 256 Kbit | — |
| Speicherorganisation | 32K x 8 | 32K x 8 |
| Access Time | 70 ns | 70 ns |
| Schnittstelle | Parallel | Parallel |
| Technology | CMOS | CMOS |
| Gehäuse | 28-SOP (PDSO28) | 28-SOP |
| Montageart | Surface Mount | Surface Mount |
| Versorgungsspannung | [DATA_NEEDED: Supply Voltage] | 5 V |
| Operating Current (active) | [DATA_NEEDED: Operating Current] | — |
| Standby Current (CMOS) | [DATA_NEEDED: Standby Current] | — |
| Betriebstemperatur | 0C to +70C (commercial grade, BF suffix) | [DATA_NEEDED: operating temperature range] |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Data Retention | Volatile (battery-backup capable with CE control) | — |
| I/O Type | Tri-state, common I/O (DQ0-DQ7) | Common Data I/O, TTL compatible |
| RoHS-Status | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Address Bus | A0-A14 (15 address lines) | — |
| Speichergröße | — | 256 Kbit |
| Standby Current | — | [DATA_NEEDED: standby current] |
| Active Current | — | [DATA_NEEDED: active current] |
| Clock / Refresh | — | Fully static, no clock or refresh required |
| Packaging | — | Tape & Reel (T00 suffix) |