K6X0808C1D-BF70T vs K6X0808C1D-GF70T00 Comparison

Detailed side-by-side comparison of K6X0808C1D-BF70T by Samsung Electronics and K6X0808C1D-GF70T00 by Samsung Electro-Mechanics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K6X0808C1D-BF70T K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T - 32Kx8 70ns Async SRAM 5V | Samsung

K6X0808C1D-BF70T ✓ Active
Samsung Electro-Mechanics
K6X0808C1D-GF70T00 K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung

K6X0808C1D-GF70T00 - 256Kbit 32Kx8 Async SRAM 70ns | Samsung

K6X0808C1D-GF70T00 ✓ Active

Specification Comparison

Parameter K6X0808C1D-BF70T K6X0808C1D-GF70T00
Brand Samsung Electronics Samsung Electro-Mechanics
Category DRAM DRAM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.05 $1.85
Memory Type SRAM - Asynchronous SRAM - Asynchronous
Memory Size 256 Kbit 256 Kbit
Memory Organization 32K x 8 —
Memory Interface Parallel —
Access Time 70 ns 70 ns
Write Cycle Time - Word, Page 70 ns —
Voltage - Supply 4.5 V to 5.5 V —
Operating Temperature -40C to +85C (TA) [DATA_NEEDED: operating temperature range]
Package 28-SOP 28-SOP
Mounting Type Surface Mount Surface Mount
Process Technology CMOS —
Address Bus Width 15 bit (A0-A14) —
Data Bus Width 8 bit (I/O0-I/O7) —
Control Signals CE, OE, WE CE, OE, WE
I/O Compatibility TTL compatible —
Refresh Requirement None (fully static operation) —
RoHS Status Compliant [DATA_NEEDED: RoHS status]
Organization — 32K x 8
Interface — Parallel
Technology — CMOS
Supply Voltage — 5 V
Standby Current — [DATA_NEEDED: standby current]
Active Current — [DATA_NEEDED: active current]
I/O Type — Common Data I/O, TTL compatible
Clock / Refresh — Fully static, no clock or refresh required
Packaging — Tape & Reel (T00 suffix)

Datasheets & Resources

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