K6X0808C1D-GF55T vs K6X0808C1D-BF70T Comparison
Detailed side-by-side comparison of K6X0808C1D-GF55T by Samsung Electro-Mechanics and K6X0808C1D-BF70T by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electro-Mechanics
K6X0808C1D-GF55T - 32Kx8 55ns Async SRAM 5V | Samsung
K6X0808C1D-GF55T ✓ ActiveSpecification Comparison
| Parameter | K6X0808C1D-GF55T | K6X0808C1D-BF70T |
|---|---|---|
| Brand | Samsung Electro-Mechanics | Samsung Electronics |
| Category | DRAM | DRAM |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.85 | $1.05 |
| Memory Type | SRAM - Asynchronous | SRAM - Asynchronous |
| Memory Size | 256 Kbit | 256 Kbit |
| Organization | 32K x 8 | — |
| Access Time | 55 ns | 70 ns |
| Supply Voltage | 5.0 V | — |
| Interface | Parallel | — |
| Process Technology | Full CMOS | CMOS |
| Mounting Type | Surface Mount | Surface Mount |
| Package | 28-SOP (450 mil) | 28-SOP |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | -40C to +85C (TA) |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Active Current | [DATA_NEEDED: active current] | — |
| Data Retention Voltage | Low data retention voltage supported (per datasheet) | — |
| Control Signals | CE, OE, WE | CE, OE, WE |
| Address Bus Width | 15 bit | 15 bit (A0-A14) |
| Data Bus Width | 8 bit | 8 bit (I/O0-I/O7) |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging | Tape & Reel (T suffix) | — |
| Memory Organization | — | 32K x 8 |
| Memory Interface | — | Parallel |
| Write Cycle Time - Word, Page | — | 70 ns |
| Voltage - Supply | — | 4.5 V to 5.5 V |
| I/O Compatibility | — | TTL compatible |
| Refresh Requirement | — | None (fully static operation) |