K6X1008C2D-BF55 vs K6X1008C2D-BF70 Comparison

Detailed side-by-side comparison of K6X1008C2D-BF55 by Samsung Electro-Mechanics and K6X1008C2D-BF70 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electro-Mechanics
K6X1008C2D-BF55 K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung

K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung

K6X1008C2D-BF55 Obsolete
Samsung Electronics
K6X1008C2D-BF70 K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung

K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung

K6X1008C2D-BF70 Nrnd

Specification Comparison

Parameter K6X1008C2D-BF55 K6X1008C2D-BF70
Brand Samsung Electro-Mechanics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Obsolete NRND
Stock Status In Stock In Stock
Unit Price (USD) $1.18 $1.28
Memory Type Asynchronous CMOS Static RAM (SRAM) Volatile SRAM (asynchronous, static)
Memory Organization 128K x 8 bit (1 Mbit) 128K x 8 (1 Mbit total)
Density 1 Mbit —
Access Time 55 ns 70 ns
Supply Voltage (VCC) 5 V (single supply) [DATA_NEEDED: VCC range]
Operating Current (ICC) 30 mA typical —
Standby Current (ICC2) [DATA_NEEDED: standby current value] —
Interface Parallel, asynchronous —
Data Bus Width 8 bit —
Address Bus Width 17 bit —
Package 32-SOP-525 (SOP-32) —
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature grade] —
Data Retention Voltage Low data retention voltage supported —
MSL Level [DATA_NEEDED: MSL rating] —
Lead-Free Yes (Lead-Free variant) —
RoHS Status Compliant —
Cell Technology 6T CMOS memory cell —
Number of Words — 131,072
Bits per Word — 8
Interface Type — Parallel, asynchronous
I/O Compatibility — TTL-compatible
Operating Mode — Fully static (no clock, no refresh)
Package Type — 32-SOP-525 (PDSO32)
Speed Grade Suffix — BF70 (= 70 ns)
Operating Temperature Range — [DATA_NEEDED: temperature grade]
Active Supply Current (ICC) — [DATA_NEEDED: ICC max]
CMOS Standby Current (ICC2) — [DATA_NEEDED: ICC2 max]
Output Enable (OE) Pin — Yes (three-state outputs)
Write Enable (WE) Pin — Yes
Chip Enable (CE) Pin — Yes
Lead-Free Finish — Yes (per datasheet revision history)
Process Technology — Low-power CMOS

Datasheets & Resources

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