K6X1008C2D-BF55 vs K6X1008C2D-BF70 对比

详细并排对比 K6X1008C2D-BF55 出自 Samsung Electro-Mechanics 和 K6X1008C2D-BF70 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Samsung Electro-Mechanics
K6X1008C2D-BF55 K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung

K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung

K6X1008C2D-BF55 Obsolete
Samsung Electronics
K6X1008C2D-BF70 K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung

K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung

K6X1008C2D-BF70 Nrnd

规格对比

参数 K6X1008C2D-BF55 K6X1008C2D-BF70
品牌 Samsung Electro-Mechanics Samsung Electronics
分类 Memory ICs Memory ICs
生命周期状态 Obsolete 不推荐新设计
库存状态 有库存 有库存
单价(USD) $1.18 $1.28
存储器类型 Asynchronous CMOS Static RAM (SRAM) Volatile SRAM (asynchronous, static)
Memory Organization 128K x 8 bit (1 Mbit) 128K x 8 (1 Mbit total)
Density 1 Mbit —
Access Time 55 ns 70 ns
Supply Voltage (VCC) 5 V (single supply) [DATA_NEEDED: VCC range]
Operating Current (ICC) 30 mA typical —
Standby Current (ICC2) [DATA_NEEDED: standby current value] —
接口 Parallel, asynchronous —
数据总线宽度 8 bit —
Address Bus Width 17 bit —
封装 32-SOP-525 (SOP-32) —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature grade] —
Data Retention Voltage Low data retention voltage supported —
MSL 等级 [DATA_NEEDED: MSL rating] —
Lead-Free Yes (Lead-Free variant) —
RoHS 状态 Compliant —
Cell Technology 6T CMOS memory cell —
Number of Words — 131,072
Bits per Word — 8
接口类型 — Parallel, asynchronous
I/O Compatibility — TTL-compatible
Operating Mode — Fully static (no clock, no refresh)
Package Type — 32-SOP-525 (PDSO32)
Speed Grade Suffix — BF70 (= 70 ns)
工作温度范围 — [DATA_NEEDED: temperature grade]
Active Supply Current (ICC) — [DATA_NEEDED: ICC max]
CMOS Standby Current (ICC2) — [DATA_NEEDED: ICC2 max]
Output Enable (OE) Pin — Yes (three-state outputs)
Write Enable (WE) Pin — Yes
Chip Enable (CE) Pin — Yes
Lead-Free Finish — Yes (per datasheet revision history)
Process Technology — Low-power CMOS

数据手册与资源

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