K6X1008C2D-BF55 vs K6X1008C2D-BF70 비교
다음의 상세 나란히 비교: K6X1008C2D-BF55 제조: Samsung Electro-Mechanics 및 K6X1008C2D-BF70 제조: Samsung Electronics. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Samsung Electro-Mechanics
K6X1008C2D-BF55 - 128Kx8 Low Power CMOS SRAM | Samsung
K6X1008C2D-BF55 ObsoleteSamsung Electronics
K6X1008C2D-BF70 - 128Kx8 70ns Low Power CMOS SRAM | Samsung
K6X1008C2D-BF70 Nrnd사양 비교
| 파라미터 | K6X1008C2D-BF55 | K6X1008C2D-BF70 |
|---|---|---|
| 브랜드 | Samsung Electro-Mechanics | Samsung Electronics |
| 카테고리 | Memory ICs | Memory ICs |
| 수명 주기 상태 | Obsolete | NRND |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $1.18 | $1.28 |
| 메모리 유형 | Asynchronous CMOS Static RAM (SRAM) | Volatile SRAM (asynchronous, static) |
| Memory Organization | 128K x 8 bit (1 Mbit) | 128K x 8 (1 Mbit total) |
| Density | 1 Mbit | — |
| Access Time | 55 ns | 70 ns |
| Supply Voltage (VCC) | 5 V (single supply) | [DATA_NEEDED: VCC range] |
| Operating Current (ICC) | 30 mA typical | — |
| Standby Current (ICC2) | [DATA_NEEDED: standby current value] | — |
| 인터페이스 | Parallel, asynchronous | — |
| 데이터 버스 폭 | 8 bit | — |
| Address Bus Width | 17 bit | — |
| 패키지 | 32-SOP-525 (SOP-32) | — |
| 실장 유형 | Surface Mount | Surface Mount |
| 동작 온도 | [DATA_NEEDED: operating temperature grade] | — |
| Data Retention Voltage | Low data retention voltage supported | — |
| MSL 레벨 | [DATA_NEEDED: MSL rating] | — |
| Lead-Free | Yes (Lead-Free variant) | — |
| RoHS 상태 | Compliant | — |
| Cell Technology | 6T CMOS memory cell | — |
| Number of Words | — | 131,072 |
| Bits per Word | — | 8 |
| 인터페이스 유형 | — | Parallel, asynchronous |
| I/O Compatibility | — | TTL-compatible |
| Operating Mode | — | Fully static (no clock, no refresh) |
| Package Type | — | 32-SOP-525 (PDSO32) |
| Speed Grade Suffix | — | BF70 (= 70 ns) |
| 동작 온도 범위 | — | [DATA_NEEDED: temperature grade] |
| Active Supply Current (ICC) | — | [DATA_NEEDED: ICC max] |
| CMOS Standby Current (ICC2) | — | [DATA_NEEDED: ICC2 max] |
| Output Enable (OE) Pin | — | Yes (three-state outputs) |
| Write Enable (WE) Pin | — | Yes |
| Chip Enable (CE) Pin | — | Yes |
| Lead-Free Finish | — | Yes (per datasheet revision history) |
| Process Technology | — | Low-power CMOS |