K9F2808Q0B vs K9LCG08U1M Comparison
Detailed side-by-side comparison of K9F2808Q0B by Samsung Electronics and K9LCG08U1M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9F2808Q0B - 128Mb SLC NAND Flash 1.8V 63-TBGA | Samsung
K9F2808Q0B ✗ End of Life
Specification Comparison
| Parameter | K9F2808Q0B | K9LCG08U1M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Flash |
| Lifecycle Status | End of Life | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.00 | $11.85 |
| Memory Type | SLC NAND Flash (parallel) | NAND Flash, MLC |
| Density | 128 Mbit | 64 Gbit (8 GB) |
| Organization | 16M x 8 | x8 I/O |
| Operating Voltage (VCC) | 1.7 V to 1.95 V | — |
| Read Access Speed | 50 ns | — |
| Cell Type | SLC (1 bit/cell) | MLC (2 bits per cell) |
| Interface | 8-bit multiplexed address/data | Asynchronous multiplexed NAND I/O |
| Package | 63-pin TBGA | BGA |
| Temperature Grade | C (commercial), I (industrial) | — |
| Mounting Type | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Typical Read Current (Icc1) | [DATA_NEEDED: Icc1] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| RoHS Status | unknown | unknown |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete | — |
| Supply Voltage | — | [DATA_NEEDED: supply voltage] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Operating Temperature | — | [DATA_NEEDED: operating temperature range] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |