K9F2808Q0B vs K9LCG08U1M 比較
詳細な並列比較: K9F2808Q0B メーカー: Samsung Electronics および K9LCG08U1M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9F2808Q0B | K9LCG08U1M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Flash |
| ライフサイクル状態 | 製造終了 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.00 | $11.85 |
| メモリタイプ | SLC NAND Flash (parallel) | NAND Flash, MLC |
| Density | 128 Mbit | 64 Gbit (8 GB) |
| メモリ構成 | 16M x 8 | x8 I/O |
| Operating Voltage (VCC) | 1.7 V to 1.95 V | — |
| Read Access Speed | 50 ns | — |
| Cell Type | SLC (1 bit/cell) | MLC (2 bits per cell) |
| インターフェース | 8-bit multiplexed address/data | Asynchronous multiplexed NAND I/O |
| パッケージ | 63-pin TBGA | BGA |
| Temperature Grade | C (commercial), I (industrial) | — |
| 実装タイプ | Surface Mount | Surface Mount |
| Page Size | [DATA_NEEDED: page size] | [DATA_NEEDED: page size] |
| Block Size | [DATA_NEEDED: block size] | [DATA_NEEDED: block size] |
| Typical Read Current (Icc1) | [DATA_NEEDED: Icc1] | — |
| Program/Erase Endurance | [DATA_NEEDED: endurance cycles] | — |
| RoHS ステータス | unknown | unknown |
| Production Status | Mass production (per legacy datasheet); now EOL/obsolete | — |
| 電源電圧 | — | [DATA_NEEDED: supply voltage] |
| Page Read Time | — | [DATA_NEEDED: page read time] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| 動作温度 | — | [DATA_NEEDED: operating temperature range] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |