Samsung Electronics

K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung

Name: K9ADGD8S0A - 3D V-NAND TCAT Flash Memory Die | Samsung
Brand: Samsung Electronics
Availability: InStock

MPN: K9ADGD8S0A ✗ End of Life

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[DATA_NEEDED: supply voltage] Vdss [DATA_NEEDED: package] Package Non-volatile NAND flash Memory

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MOQ: 1 |

Price updated: 2026-09-03

Volume Pricing

Qty	Unit Price	Extended
1	$0	$0.00
10	$0	$0.00
100	$0	$0.00
500	$0	$0.00
1,000	$0	$0.00

ℹ️ All prices are in USD

View Datasheet (PDF) View Alternatives

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Drop-in alternatives for K9ADGD8S0A — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

K9HQGY8S5M-CCK0

✅ Drop-In

📦 Bare die (contained in packaged V-NAND)

packaged parent device containing K9ADGD8S0A dies; solderable package vs bare die

📋 Reference alternative (not in catalog)

K9LPGY8S1M-CCK0

✅ Drop-In

📦 Bare die (contained in packaged V-NAND)

packaged parent device containing K9ADGD8S0A dies, higher-density assembly variant

📋 Reference alternative (not in catalog)

K9HQGY8S5M

✅ Drop-In ⚠️ 参数待验证

Samsung Electronics

📦 Packaged V-NAND

Samsung Electronics · 3D V-NAND Flash Memory (stacked, client NAND) · 316-ball Fine Pitch BGA (FBGA-316) · 4 x K9ADGD8S0A V-NAND dies (per TechInsights package analysis) · 32-layer pMLC 3D V-NAND (per Samsung 850 Pro 256 GB analysis) · Non-volatile NAND flash · NAND (ONFI/Toggle-style asynchronous interface) - exact timing mode [DATA_NEEDED: interface timing mode] · [DATA_NEEDED: total bit density]

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K9PRGY8S7M

✅ Drop-In ⚠️ 参数待验证

Samsung Electronics

📦 Packaged V-NAND

NAND Flash · Samsung Electronics · [DATA_NEEDED: density] · [DATA_NEEDED: organization] · [DATA_NEEDED: interface type] · [DATA_NEEDED: supply voltage] · [DATA_NEEDED: page size] · [DATA_NEEDED: block size]

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K9PRGY8S7M-CCK0

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Samsung Electronics

📦 Packaged V-NAND

NAND Flash · Samsung Electronics · BGA (surface mount) · Surface Mount · Lead free / RoHS compliant · [DATA_NEEDED: density] · [DATA_NEEDED: bus width] · [DATA_NEEDED: supply voltage]

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K9ADGD8S0A Maximum Ratings & Electrical Characteristics

Device Type	3D V-NAND flash memory bare die
Process Technology	Terabit Cell Array Transistor (TCAT)
Architecture	3D vertical NAND (V-NAND)
Form Factor	Bare die (unpackaged)
Found In	Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages
Known Application	Samsung 850 Pro 128 GB SSD
Memory Class	Non-volatile NAND flash
Manufacturer	Samsung Electronics
Documented By	TechInsights report SAR-1407-802

K9ADGD8S0A [data_needed: package] Pin Configuration Guide

Complete pinout information for K9ADGD8S0A ([data_needed: package] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

[data_needed: package] package pinout diagram for K9ADGD8S0A

No detailed pinout data available for K9ADGD8S0A.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

K9ADGD8S0A is suitable for 6 applications: Semiconductor Structural Analysis, SSD 850 Pro Teardown and Repair, V-NAND Process Research, Consumer SSD Storage, Educational Training, Failure Analysis Reference.

🔬

Semiconductor Structural Analysis

The K9ADGD8S0A is a primary subject for die-level structural analysis of 3D V-NAND. TechInsights report SAR-1407-802 documents the die's TCAT construction inside K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages, providing layer counts, cell dimensions, and process details. Because the die embodies Samsung's first-generation vertical NAND approach, it allows analysts to benchmark early 3D NAND cell arrays against modern generations. Delayering, cross-section SEM, and TEM analysis of this die reveal charge-trap cell structure, vertical channel dimensions, and tier stacking, making it a reference specimen for competitive teardown labs studying the planar-to-3D NAND transition.

Recommended

K9HQGY8S5M-CCK0 (Packaged device containing this die) K9LPGY8S1M-CCK0 (Packaged device containing this die)

🖥️

SSD 850 Pro Teardown and Repair

The Samsung 850 Pro 128 GB SSD uses V-NAND packages built from K9ADGD8S0A dies. Repair technicians and data-recovery labs servicing 850 Pro drives encounter the packaged K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 devices on the PCB. Understanding that these packages contain TCAT V-NAND dies helps in diagnosing flash-related failures and sourcing replacement packages. Since the bare die itself is not serviceable, board-level repair relies on replacing the parent packaged components, and awareness of the die-to-package relationship supports accurate BOM matching during SSD component substitution and rework.

Recommended

K9HQGY8S5M-CCK0 (V-NAND package used in 850 Pro SSD) K9LPGY8S1M-CCK0 (V-NAND package used in 850 Pro SSD)

🧪

V-NAND Process Research

Researchers studying charge-trap 3D NAND technology use the K9ADGD8S0A as a historically significant specimen because it represents Samsung's TCAT process, the first mass-produced vertical NAND implementation. Academic and industrial labs analyze the die to compare TCAT's stacked-conductive-layer approach with later gate-replacement processes. The die's presence in a shipping consumer product (the 850 Pro SSD) makes it a well-documented sample with published references such as TechInsights SAR-1407-802 and REATISS process analysis, giving researchers a verified baseline for electrical characterization, retention modeling, and endurance studies of early 3D NAND cells.

Recommended

K9HQGY8S5M-CCK0 (Package source of the die for research) K9LPGY8S1M-CCK0 (Alternate package source of the die)

💾

Consumer SSD Storage

In its commercial role, the K9ADGD8S0A die functions as the storage medium of the Samsung 850 Pro 128 GB SATA SSD, mounted within K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 V-NAND packages on the drive PCB. The TCAT V-NAND architecture delivered higher endurance than planar NAND of the era, which underpinned the 850 Pro's 10-year warranty positioning. Engineers evaluating legacy 850 Pro drives for continued deployment should note that this first-generation V-NAND is EOL, and that capacity upgrades route through newer Samsung V-NAND generations rather than this die, which is no longer produced.

Recommended

K9HQGY8S5M-CCK0 (Packaged V-NAND in 850 Pro SSD) K9LPGY8S1M-CCK0 (Packaged V-NAND in 850 Pro SSD)

🎓

Educational Training

The K9ADGD8S0A is valuable for teaching 3D NAND concepts because it is a real, mass-production TCAT V-NAND die with published third-party analysis. Universities and corporate training programs use die photographs and cross-sections from TechInsights and REATISS to illustrate how vertical channels traverse stacked cell tiers, how charge-trap layers replace floating gates, and how peripheral circuits are arranged around the cell array. Compared with textbook diagrams, this die grounds abstract memory hierarchy concepts (die -> package -> SSD) in a concrete industrial artifact students can reference in the public literature.

Recommended

K9HQGY8S5M-CCK0 (Documented parent package) K9LPGY8S1M-CCK0 (Documented parent package)

🔍

Failure Analysis Reference

Failure-analysis labs use the K9ADGD8S0A as a known-good reference die when diagnosing defects in first-generation Samsung V-NAND packages from 850 Pro-era products. Having a structurally characterized reference (TechInsights SAR-1407-802) enables comparison of suspect units against documented layer stacks, contact geometry, and tier construction. Techniques such as emission microscopy, OBIRCH, and FIB circuit edit performed on K9HQGY8S5M-CCK0 packages benefit from die-level knowledge of the K9ADGD8S0A, shortening time-to-defect and improving root-cause accuracy for retention failures, read-disturb errors, and program-erase degradation in legacy drives.

Recommended

K9HQGY8S5M-CCK0 (Parent package for FA comparison) K9LPGY8S1M-CCK0 (Parent package for FA comparison)

Recommended Products Summary

K9HQGY8S5M-CCK0 Packaged device containing this die Used in: Semiconductor Structural Analysis, SSD 850 Pro Teardown and Repair, V-NAND Process Research, Consumer SSD Storage, Educational Training, Failure Analysis Reference K9LPGY8S1M-CCK0 Packaged device containing this die Used in: Semiconductor Structural Analysis, SSD 850 Pro Teardown and Repair, V-NAND Process Research, Consumer SSD Storage, Educational Training, Failure Analysis Reference

What is the Samsung K9ADGD8S0A?

The Samsung K9ADGD8S0A is a bare-die 3D vertical NAND (V-NAND) flash memory device fabricated with Samsung's proprietary terabit cell array transistor (TCAT) technology. According to TechInsights structural analysis report SAR-1407-802, the die was identified inside Samsung K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packaged V-NAND components used in the Samsung 850 Pro 128 GB SSD. It is not sold as a standard packaged component through authorized distributors.

What technology is used in the K9ADGD8S0A die?

The K9ADGD8S0A uses Samsung's TCAT (terabit cell array transistor) 3D V-NAND process technology. TCAT was Samsung's first-generation vertical NAND manufacturing approach, in which memory cell layers are stacked vertically and a vertical channel pierces the stacked tiers. This architecture increases bit density without shrinking planar cell dimensions, improving endurance and write performance compared with planar NAND of the same node.

Where was the K9ADGD8S0A die found?

The K9ADGD8S0A die was found inside Samsung's K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 V-NAND flash packages, which were themselves extracted from the Samsung 850 Pro 128 GB SSD. TechInsights performed the structural analysis that identified this die (report SAR-1407-802), and REATISS independently performed process analysis on the same family of V-NAND devices.

What is the price of K9ADGD8S0A?

There is no published distributor pricing for the K9ADGD8S0A as of 2026-09-04. Because this part is a bare silicon die identified through teardown analysis rather than a catalog component stocked by DigiKey, Mouser, or Octopart, it has no standard quantity-break pricing. Availability is limited to broker, excess-inventory, or sample channels; contact XAIPART for a quote on any identified stock.

Where to buy K9ADGD8S0A online?

The K9ADGD8S0A is not listed by authorized distributors such as DigiKey or Mouser as of 2026-09-04. As a die-level product recovered from teardown contexts, sourcing is typically through independent brokers or packaged equivalents such as the K9HQGY8S5M or K9LPGY8S1M V-NAND devices. For most commercial designs, the packaged parent V-NAND components are the practical purchasing route.

Is K9ADGD8S0A in stock and what is the lead time?

Stock status for the bare-die K9ADGD8S0A is unknown as of 2026-09-04 because it is not tracked by authorized distributor inventory systems. Lead time cannot be stated with confidence. Buyers needing V-NAND functionality should source the packaged K9HQGY8S5M-CCK0 or K9LPGY8S1M-CCK0 devices, which historically have standard distributor availability, or request a quote for die samples.

What is the best drop-in replacement for K9ADGD8S0A?

For packaged V-NAND functionality, the closest same-family replacements are the Samsung K9HQGY8S5M and K9LPGY8S1M V-NAND devices, which are the parent packages containing K9ADGD8S0A dies. As a bare die, however, no true drop-in replacement exists because the part has no standard footprint or pinout. Engineers should evaluate the packaged V-NAND family members rather than seeking die-level substitutes.

Is K9ADGD8S0A the same as K9HQGY8S5M?

No, they are not the same: the K9ADGD8S0A is a bare V-NAND die, while the K9HQGY8S5M is a packaged V-NAND component that contains K9ADGD8S0A dies inside. According to TechInsights report SAR-1407-802, the K9ADGD8S0A die was found inside K9HQGY8S5M-CCK0 packages from the Samsung 850 Pro 128 GB SSD. Think of the die as the silicon building block and the K9 part as the finished, solderable product.

K9ADGD8S0A vs K9LPGY8S1M - which should I use?

For any practical design, choose the packaged K9LPGY8S1M, not the K9ADGD8S0A die. The K9ADGD8S0A is the unpackaged silicon die found inside both K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages per TechInsights analysis, so the packaged devices deliver the same V-NAND technology with a solderable footprint, standardized pinout, and distributor support. The bare die suits research and analysis work only.

Where can I download the K9ADGD8S0A datasheet PDF?

No public commercial datasheet PDF exists for the K9ADGD8S0A as of 2026-09-04 because it is a bare die rather than a catalog product. The most authoritative technical documentation is the TechInsights structural analysis report SAR-1407-802, which describes the TCAT V-NAND process, and the REATISS process analysis gallery covering this die. Samsung's semiconductor website hosts documentation for the packaged K9-series V-NAND products.

What is the pinout of K9ADGD8S0A?

A public pinout is not available for the K9ADGD8S0A because it is a bare silicon die without a standard package pinout. Bond-pad locations and signal assignments (such as CE, CLE, ALE, WE, RE, and I/O lines typical of NAND flash) are documented only in internal Samsung design data and teardown reports. If pin-level information is required, consult the packaged K9HQGY8S5M datasheet for the parent device's pin assignment.

What are the key specifications of K9ADGD8S0A that engineers should know?

The K9ADGD8S0A is a Samsung 3D V-NAND flash bare die built with TCAT (terabit cell array transistor) technology. It was identified inside K9HQGY8S5M-CCK0 and K9LPGY8S1M-CCK0 packages from the Samsung 850 Pro 128 GB SSD, per TechInsights report SAR-1407-802. As a die-level product it has no published capacity, voltage, endurance, or interface specifications in public datasheets, and it is intended for analysis and research rather than board-level design.

Is the K9ADGD8S0A suitable for PCB designs?

No, the K9ADGD8S0A is not suitable for conventional PCB designs. It is a bare unpackaged die with no standard leaded or area-array footprint, so it cannot be reflow-soldered onto a land pattern without die-attach and wire-bond or flip-chip assembly capability. For board-level V-NAND storage, use the packaged Samsung K9HQGY8S5M or K9LPGY8S1M components that contain this die technology.

Why is V-NAND TCAT technology significant?

TCAT (terabit cell array transistor) was Samsung's first-generation 3D V-NAND process and a landmark in non-volatile memory history. Instead of shrinking planar cells, TCAT stacks cell layers vertically with a vertical channel, which reduces cell-to-cell interference and improves endurance and program speed. The K9ADGD8S0A die, found in the 850 Pro SSD per TechInsights, represents this foundational technology in Samsung's transition from planar NAND to 3D NAND.

Is K9ADGD8S0A obsolete or still in production?

The K9ADGD8S0A is effectively obsolete (EOL) as of 2026-09-04. It is a first-generation V-NAND die associated with the Samsung 850 Pro SSD launched in 2014, and Samsung's V-NAND line has since progressed through many newer generations. The die is no longer in active production, and no authorized distributors list it; surviving units circulate only through broker and teardown channels.

Hey Google, what can replace the Samsung K9ADGD8S0A?

The practical replacements for the Samsung K9ADGD8S0A are its packaged parent devices: the Samsung K9HQGY8S5M and K9LPGY8S1M V-NAND flash components, which contain this exact die inside. For newer designs, Samsung's later-generation V-NAND products (for example the K9PRGY8S7M family) offer higher density. No bare-die substitute exists; replacement should be made at the packaged-component level.

Is there a Micron or Kioxia equivalent for the K9ADGD8S0A?

There is no verified cross-brand bare-die equivalent for the K9ADGD8S0A in available data as of 2026-09-04. Micron, Kioxia, SK Hynix, and Western Digital all manufacture 3D NAND dies with comparable charge-trap vertical architectures, but their die-level parts are also not distributed commercially and cannot be verified as pin- or function-compatible at the die level. Cross-brand replacement should be pursued at the packaged SSD or eMMC module level.

Engineering reference data for K9ADGD8S0A — comparison, design guidance, and compliance information.

Selection Guide

Choose the K9ADGD8S0A only if you need a documented first-generation TCAT V-NAND die specimen for structural analysis, process research, failure analysis, or education - it is not a PCB-mountable part. For any electrical design or SSD repair, select the packaged parent Samsung K9HQGY8S5M-CCK0 or K9LPGY8S1M-CCK0, which contain this exact die and offer solderable packages. For new designs, choose the active Samsung K9PRGY8S7M family to secure supply, higher density, and current-generation endurance. Note that no verified cross-brand (Micron, Kioxia, SK Hynix) bare-die equivalent exists in available data as of 2026-09-04; cross-brand replacement must be pursued at the packaged NAND or SSD module level.

Comparison with Alternatives

Parameter	This Product	K9HQGY8S5M-CCK0	K9LPGY8S1M-CCK0	K9PRGY8S7M
Package	Bare die (unpackaged)	Packaged V-NAND (contains this die)	Packaged V-NAND (contains this die)	Packaged V-NAND
Brand	Samsung Electronics	Samsung Electronics	Samsung Electronics	Samsung Electronics
Process Technology	3D V-NAND (TCAT)	3D V-NAND (TCAT)	3D V-NAND (TCAT)	3D V-NAND (later generation)
Generation	First-generation V-NAND	First-generation V-NAND	First-generation V-NAND	Newer generation
Documented Application	Samsung 850 Pro 128 GB SSD	Samsung 850 Pro 128 GB SSD	Samsung 850 Pro 128 GB SSD	[DATA_NEEDED]
PCB Mountable	No (bare die)	Yes	Yes	Yes
Unit Price (qty 1)	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]	[DATA_NEEDED]
Lifecycle Status	EOL	EOL	EOL	Active

Key Differentiators

First-generation mass-production 3D V-NAND (vs K9PRGY8S7M)
Documented inside two parent packages (vs K9LPGY8S1M-CCK0)
Trade-off: not PCB-mountable (vs K9HQGY8S5M-CCK0)

Design Notes

The K9ADGD8S0A is a bare silicon die, not a packaged component. It cannot be reflow-soldered to a PCB land pattern and has no public pinout or bond-pad map. Any design requiring this storage technology must use the packaged Samsung K9HQGY8S5M-CCK0 or K9LPGY8S1M-CCK0 devices that contain this die. Attempting to source the bare die for production is a sourcing dead end since no authorized distributor carries it.

This is a first-generation TCAT V-NAND die associated with the 2014 Samsung 850 Pro SSD and is EOL as of 2026-09-04. New designs should specify current-generation Samsung V-NAND (for example the K9PRGY8S7M family) to secure supply, endurance improvements, and firmware ecosystem support. Legacy repair work on 850 Pro drives should source the packaged K9-series devices rather than the die itself.

For analysis work on dies recovered from 850 Pro packages, remember that multiple K9ADGD8S0A dies may be stacked or multiplexed inside a single K9HQGY8S5M-CCK0 or K9LPGY8S1M-CCK0 package; package-level electrical testing therefore exercises shared control signals across dies. Die-level characterization requires decapsulation and direct probing, which is destructive. Consult TechInsights report SAR-1407-802 for the documented internal construction before planning sample preparation.

Compliance Information

RoHS

Unknown

REACH

Unknown

AEC-Q100

Not Applicable

Lead Free

Unknown

Halogen Free

Unknown

Conflict Minerals

Unknown

No compliance data is published for this bare die in the provided sources. Compliance should be assessed at the packaged parent level (K9HQGY8S5M-CCK0 / K9LPGY8S1M-CCK0).

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

Sources: Manufacturer_Product_Page, Manufacturer_Product_Page, Distributor

Related Components & Terms

Samsung Electronics K9ADGD8S0A K9HQGY8S5M-CCK0 K9LPGY8S1M-CCK0 K9PRGY8S7M V-NAND 3D NAND TCAT terabit cell array transistor NAND flash non-volatile memory bare die TechInsights SAR-1407-802 Samsung 850 Pro 128 GB SSD charge-trap flash solid-state storage REATISS process analysis Memory ICs