K9LUGY8J7D-CCK0 - Samsung V-NAND TLC Flash | Samsung Electronics
MPN: K9LUGY8J7D-CCK0 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for K9LUGY8J7D-CCK0 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
K9LUGY8J7D-BCK0
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View Datasheet →K9KUGY8J7C-CCK0
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View Datasheet →K9KUGY8J7C-BCK0
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$9.55 / Unit
View Datasheet →K9JUGY8J5C-CCK0
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$7.6 / Unit
View Datasheet →K9JUGY8J5C-BCK0
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View Datasheet →K9IUGY8J7B-CCK0
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$1 / Unit
View Datasheet →K9HUGY8J5B-CCK0
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$9.6 / Unit
View Datasheet →K9LUGY8J7D-CCK0 Maximum Ratings & Electrical Characteristics
| Manufacturer | Samsung Electronics |
| Memory Type | NAND Flash (V-NAND) |
| Memory Cell Type | TLC (Triple-Level Cell) |
| Technology | V-NAND (vertical NAND) |
| Package | BGA (surface mount) |
| Mounting Type | Surface Mount |
| Speed Grade Code | CCK0 (per Samsung part-number convention) |
K9LUGY8J7D-CCK0 bga (surface mount) Pin Configuration Guide
Complete pinout information for K9LUGY8J7D-CCK0 (bga (surface mount) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
No detailed pinout data available for K9LUGY8J7D-CCK0.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
K9LUGY8J7D-CCK0 is suitable for 6 applications: Solid-State Drives (SSD), Embedded Storage (eMMC/UFS-class subsystems), Datacenter and Enterprise Storage, USB Flash Drive and Memory Card Products, Industrial and Rugged Storage, AIoT and Smart Camera Storage.
Solid-State Drives (SSD)
The K9LUGY8J7D-CCK0 serves as core non-volatile storage media in client and enterprise SSD designs. Samsung GY8-generation V-NAND TLC offers high bits-per-package density, which reduces the number of packages required per drive and lowers PCB area and BOM cost per terabyte. In an SSD, multiple V-NAND packages connect to a controller over toggle DDR channels; the CCK0 speed grade defines the timing envelope the controller must support. Strong LDPC ECC and wear-leveling in the controller are mandatory to meet rated program/erase endurance and data retention over the drive lifetime.
Recommended
Embedded Storage (eMMC/UFS-class subsystems)
Designers of embedded storage modules use high-density TLC V-NAND such as the K9LUGY8J7D-CCK0 as the raw storage behind managed controllers in set-top boxes, smart displays, and industrial HMI equipment. The BGA package supports compact, reflow-assembled module layouts, and the high per-package density lets a small module reach large capacities with fewer NAND channels. Because raw NAND requires full firmware management (bad-block tables, ECC, garbage collection), pair this device with a controller firmware qualified for Samsung GY8-generation device IDs and timing (C-series speed code).
Recommended
Datacenter and Enterprise Storage
Enterprise storage arrays and all-flash appliances deploy TLC V-NAND parts of this class to achieve competitive cost-per-TB while maintaining acceptable write endurance under datacenter workloads. The K9LUGY8J7D-CCK0, as a Samsung GY8-generation V-NAND device, provides the stacked-cell density needed to pack tens of terabytes into a single drive form factor. Enterprise deployments typically provision over-provisioning headroom and power-loss protection capacitors around the NAND rails, and qualify the exact CCK0 speed grade on the controller's firmware qualified-vendor list before volume commits.
Recommended
USB Flash Drive and Memory Card Products
High-capacity USB flash drives and high-performance memory cards build on TLC V-NAND dies and packages of this Samsung family, where cost per gigabyte is the dominant design factor. The K9LUGY8J7D-CCK0's high density allows a single or few packages to deliver large capacities within the tight mechanical envelope of a card or stick. USB controller firmware must support the Samsung device ID and toggle-mode timings associated with the CCK0 code; sequential read/write performance is bounded by the number of NAND channels and the speed grade, so verify controller channel configuration against datasheet timing before committing.
Recommended
Industrial and Rugged Storage
Industrial computers, transportation recorders, and ruggedized logging equipment use TLC V-NAND such as the K9LUGY8J7D-CCK0 inside industrial SD/CFast modules and BGA-down storage solutions, valuing vibration immunity of surface-mount BGA assembly over rotating media. Confirm the temperature grade encoded in the device suffix matches the industrial environment; if extended temperature is required, validate with Samsung that this specific speed/packaging code meets the target range. Controller firmware should implement periodic data refresh and power-fail resilience to protect retention and integrity in harsh duty cycles.
Recommended
AIoT and Smart Camera Storage
AI camera nodes, smart doorbells, and edge video recorders require dense, power-efficient local storage for continuous video buffering and on-device analytics data. TLC V-NAND of the Samsung GY8 generation provides high capacity per package, letting compact edge boards store days of video or model artifacts locally. The K9LUGY8J7D-CCK0 interfaces through the host SoC or a dedicated NAND controller over toggle DDR; designers must budget for sequential write bandwidth of the CCK0 speed grade and implement cyclic overwrites plus health monitoring so sustained 24/7 recording stays within the rated endurance profile.
Recommended
Recommended Products Summary
Engineering reference data for K9LUGY8J7D-CCK0 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9LUGY8J7D-BCK0 | K9KUGY8J7C-CCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|---|---|
| Package | BGA (surface mount) | BGA - same | BGA - same family | BGA - same family |
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Cell Type | TLC V-NAND | TLC V-NAND | TLC V-NAND | TLC V-NAND |
| Speed Grade Code | CCK0 | BCK0 | CCK0 | CCK0 |
| Density | [DATA_NEEDED] | same die generation (verify datasheet) | [DATA_NEEDED] | [DATA_NEEDED] |
| Interface | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Supply Voltage | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Lifecycle Status | Active (verify with Samsung) | Active | Active | Older generation - verify status |
Key Differentiators
- Latest C-series speed grade within the same die generation (vs K9LUGY8J7D-BCK0)
- Samsung V-NAND vertical stacking (vs K9HUGY8J5B-CCK0)
- Footprint compatibility across family speed grades (vs K9JUGY8J5C-BCK0)
Design Notes
Treat the toggle DDR NAND channel of the K9LUGY8J7D-CCK0 as a controlled-impedance bus. Length-match data signals within the timing budget in the Samsung datasheet, maintain an unbroken ground reference plane under the bus, and series-terminate at the controller where recommended. Place the BGA close to the controller to minimize stub length; keep DQ/RE/CE routing away from switching regulator nodes to avoid coupling jitter into read timing margins.
Decouple every VCC and VCCQ ball of the BGA package with low-ESR ceramic capacitors placed adjacent to the ball via pairs. Use dedicated power planes for VCCQ (I/O) and VCC (core) with ferrite or PI filtering per Samsung's reference design guidance to reduce supply noise during simultaneous program operations, which draw high transient currents. Estimated: peak program current is highest when multiple dies program concurrently - size the regulator for worst-case multi-die concurrent program, not just average read current.
Never connect raw TLC V-NAND directly to a host without LDPC ECC, bad-block management, and wear-leveling firmware; TLC cells require strong error correction and the device ID/timing profile of the exact speed-grade code (CCK0) must be in the controller firmware's supported list. Also verify the reflow profile suits lead-free BGA balls, and confirm second-source substitutions (e.g., BCK0 vs CCK0) against controller qualified-vendor lists before mass production.
Compliance Information
Compliance data was not present in the retrieved web data. Request Samsung material declaration sheets (MDS) and certificate of conformance from Samsung distribution for this exact MPN.
