K9XXG08U0M vs K9LCG08U1M Comparison
Detailed side-by-side comparison of K9XXG08U0M by Samsung Electronics and K9LCG08U1M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K9XXG08U0M | K9LCG08U1M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Flash |
| Lifecycle Status | Obsolete | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.60 | $11.85 |
| Memory Type | NAND Flash | NAND Flash, MLC |
| Density | 8 G-bit | 64 Gbit (8 GB) |
| Organization | 1G x 8 bit | x8 I/O |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Supply Voltage | 2.7 V to 3.6 V (3.3V device) | [DATA_NEEDED: supply voltage] |
| Interface | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous multiplexed NAND I/O |
| Page Read Time | 20 us | [DATA_NEEDED: page read time] |
| Package | 48-pin TSOP-I | BGA |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | unknown |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |