K9XXG08U0M vs K9LCG08U1M Vergleich
Detaillierter Direktvergleich von K9XXG08U0M von Samsung Electronics und K9LCG08U1M von Samsung Electronics. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | K9XXG08U0M | K9LCG08U1M |
|---|---|---|
| Marke | Samsung Electronics | Samsung Electronics |
| Kategorie | Memory ICs | Flash |
| Lebenszyklusstatus | Obsolete | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $5,60 | $11,85 |
| Speichertyp | NAND Flash | NAND Flash, MLC |
| Density | 8 G-bit | 64 Gbit (8 GB) |
| Speicherorganisation | 1G x 8 bit | x8 I/O |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Versorgungsspannung | 2.7 V to 3.6 V (3.3V device) | [DATA_NEEDED: supply voltage] |
| Schnittstelle | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous multiplexed NAND I/O |
| Page Read Time | 20 us | [DATA_NEEDED: page read time] |
| Gehäuse | 48-pin TSOP-I | BGA |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperatur | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| RoHS-Status | [DATA_NEEDED: RoHS status] | unknown |
| MSL-Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |