K9XXG08U0M vs K9LCG08U1M 比較
詳細な並列比較: K9XXG08U0M メーカー: Samsung Electronics および K9LCG08U1M メーカー: Samsung Electronics。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | K9XXG08U0M | K9LCG08U1M |
|---|---|---|
| ブランド | Samsung Electronics | Samsung Electronics |
| カテゴリ | Memory ICs | Flash |
| ライフサイクル状態 | Obsolete | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $5.60 | $11.85 |
| メモリタイプ | NAND Flash | NAND Flash, MLC |
| Density | 8 G-bit | 64 Gbit (8 GB) |
| メモリ構成 | 1G x 8 bit | x8 I/O |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| 電源電圧 | 2.7 V to 3.6 V (3.3V device) | [DATA_NEEDED: supply voltage] |
| インターフェース | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous multiplexed NAND I/O |
| Page Read Time | 20 us | [DATA_NEEDED: page read time] |
| パッケージ | 48-pin TSOP-I | BGA |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| RoHS ステータス | [DATA_NEEDED: RoHS status] | unknown |
| MSLレベル | [DATA_NEEDED: moisture sensitivity level] | — |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |