K9XXG08U0M vs K9LCG08U1M Сравнение
Подробное сравнение бок о бок K9XXG08U0M от Samsung Electronics и K9LCG08U1M от Samsung Electronics. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Сравнение характеристик
| Параметр | K9XXG08U0M | K9LCG08U1M |
|---|---|---|
| Бренд | Samsung Electronics | Samsung Electronics |
| Категория | Memory ICs | Flash |
| Статус жизненного цикла | Obsolete | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $5,60 | $11,85 |
| Тип памяти | NAND Flash | NAND Flash, MLC |
| Density | 8 G-bit | 64 Gbit (8 GB) |
| Организация памяти | 1G x 8 bit | x8 I/O |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Напряжение питания | 2.7 V to 3.6 V (3.3V device) | [DATA_NEEDED: supply voltage] |
| Интерфейс | 8-bit parallel NAND (command/address/data multiplexed) | Asynchronous multiplexed NAND I/O |
| Page Read Time | 20 us | [DATA_NEEDED: page read time] |
| Корпус | 48-pin TSOP-I | BGA |
| Тип монтажа | Surface Mount | Surface Mount |
| Рабочая температура | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | MLC (2 bits per cell) |
| ECC Requirement | External ECC by host controller | — |
| Статус RoHS | [DATA_NEEDED: RoHS status] | unknown |
| Уровень MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |
| Ordering Codes | — | K9LCG08U1M-LCB0 / K9LCG08U1M-LCB00 / K9LCG08U1M-LCB |