K9XXG08U0M vs K9PDG08U5M Comparison
Detailed side-by-side comparison of K9XXG08U0M by Samsung Electronics and K9PDG08U5M by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K9PDG08U5M - 4Gb x8 SLC NAND Flash 3.3V | Samsung Electronics
K9PDG08U5M ✗ End of LifeSpecification Comparison
| Parameter | K9XXG08U0M | K9PDG08U5M |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | EEPROM |
| Lifecycle Status | Obsolete | End of Life |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.60 | $4.20 |
| Memory Type | NAND Flash | NAND Flash (SLC) |
| Density | 8 G-bit | 4 Gbit |
| Organization | 1G x 8 bit | x8 (multiplexed I/O) |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| Supply Voltage | 2.7 V to 3.6 V (3.3V device) | [DATA_NEEDED: supply voltage range] |
| Interface | 8-bit parallel NAND (command/address/data multiplexed) | — |
| Page Read Time | 20 us | [DATA_NEEDED: page read time] |
| Package | 48-pin TSOP-I | TSOP1-48 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | — |
| ECC Requirement | External ECC by host controller | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |