K9XXG08U0M vs K9PDG08U5M 对比
详细并排对比 K9XXG08U0M 出自 Samsung Electronics 和 K9PDG08U5M 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K9XXG08U0M | K9PDG08U5M |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | Obsolete | 停产 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $5.60 | $4.20 |
| 存储器类型 | NAND Flash | NAND Flash (SLC) |
| Density | 8 G-bit | 4 Gbit |
| 存储组织 | 1G x 8 bit | x8 (multiplexed I/O) |
| Spare Area | 256 M-bit (per K9K8G08U0M) | — |
| 电源电压 | 2.7 V to 3.6 V (3.3V device) | [DATA_NEEDED: supply voltage range] |
| 接口 | 8-bit parallel NAND (command/address/data multiplexed) | — |
| Page Read Time | 20 us | [DATA_NEEDED: page read time] |
| 封装 | 48-pin TSOP-I | TSOP1-48 |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Access Interface Standard | Samsung legacy NAND command set | — |
| Bad Block Management | Factory bad block marking (host-managed ECC required) | — |
| Cell Type | SLC (K9K8G08U0M) / MLC (K9G8G08U0M variants) | — |
| ECC Requirement | External ECC by host controller | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| MSL 等级 | [DATA_NEEDED: moisture sensitivity level] | — |
| Page Size | — | [DATA_NEEDED: page size] |
| Block Size | — | [DATA_NEEDED: block size] |
| Page Program Time | — | [DATA_NEEDED: page program time] |
| Block Erase Time | — | [DATA_NEEDED: block erase time] |
| Access Interface | — | Asynchronous multiplexed address/data, CLE/ALE control |
| Ready/Busy Output | — | Yes (R/B, open-drain) |
| Write Protect Pin | — | Yes (/WP) |
| Endurance | — | [DATA_NEEDED: program/erase cycles] |