LMG2104R044 vs LMG2104R022 Comparison
Detailed side-by-side comparison of LMG2104R044 by Texas Instruments and LMG2104R022 by Texas Instruments. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | LMG2104R044 | LMG2104R022 |
|---|---|---|
| Brand | Texas Instruments | Texas Instruments |
| Category | Power MOSFET Drivers | Power MOSFET Drivers |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.08 | $2.79 |
| Topology | Half-Bridge (high-side + low-side) | Half-bridge (high-side + low-side GaN FETs) |
| Switch Type | Enhancement-mode GaN FET | — |
| Drain-Source Blocking Voltage | 100 V | — |
| Typical Rds(on) per FET | 4.4 mΩ | — |
| Integrated Gate Driver | Yes | Yes |
| Integrated Bootstrap Regulator | Yes | — |
| Logic Input Compatibility | TTL, 3.3 V and 5 V | — |
| Dead-Time Control | Smart-Switching auto dead-time | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and bootstrap) | — |
| Thermal Shutdown | Yes | — |
| Short-Circuit / Overcurrent Protection | Yes | — |
| Package | QFN 5 mm x 4 mm | QFN-18 (VBNR) 4.5 mm × 7.0 mm |
| Operating Temperature | -40C to +125C | — |
| Mounting Type | Surface Mount | Surface Mount |
| RoHS Status | Compliant | — |
| Product Type | — | 100V GaN Half-Bridge Power Stage with Integrated Driver |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Typical On-Resistance (RDS(on)) | — | 2.2 mΩ |
| FET Technology | — | Enhancement-mode Gallium Nitride (eGaN) |
| Smart Switching Features | — | Yes (dV/dt control, adaptive dead time) |
| Under-Voltage Lockout (UVLO) | — | Yes |
| Over-Current Protection | — | Yes |
| Over-Temperature Protection | — | Yes |
| Bootstrap Diode | — | Integrated |
| Lead Finish / RoHS | — | RoHS compliant |
| Operating Mode | — | Half-bridge, hard-switched or soft-switched |