LMG2104R044 vs LMG2104R022 对比
详细并排对比 LMG2104R044 出自 Texas Instruments 和 LMG2104R022 出自 Texas Instruments。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | LMG2104R044 | LMG2104R022 |
|---|---|---|
| 品牌 | Texas Instruments | Texas Instruments |
| 分类 | Power MOSFET Drivers | Power MOSFET Drivers |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.08 | $2.79 |
| 拓扑 | Half-Bridge (high-side + low-side) | Half-bridge (high-side + low-side GaN FETs) |
| Switch Type | Enhancement-mode GaN FET | — |
| Drain-Source Blocking Voltage | 100 V | — |
| Typical Rds(on) per FET | 4.4 mΩ | — |
| Integrated Gate Driver | Yes | Yes |
| Integrated Bootstrap Regulator | Yes | — |
| Logic Input Compatibility | TTL, 3.3 V and 5 V | — |
| Dead-Time Control | Smart-Switching auto dead-time | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and bootstrap) | — |
| 热关断 | Yes | — |
| Short-Circuit / Overcurrent Protection | Yes | — |
| 封装 | QFN 5 mm x 4 mm | QFN-18 (VBNR) 4.5 mm × 7.0 mm |
| 工作温度 | -40C to +125C | — |
| 安装类型 | Surface Mount | Surface Mount |
| RoHS 状态 | Compliant | — |
| Product Type | — | 100V GaN Half-Bridge Power Stage with Integrated Driver |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Typical On-Resistance (RDS(on)) | — | 2.2 mΩ |
| FET Technology | — | Enhancement-mode Gallium Nitride (eGaN) |
| Smart Switching Features | — | Yes (dV/dt control, adaptive dead time) |
| Under-Voltage Lockout (UVLO) | — | Yes |
| Over-Current Protection | — | Yes |
| Over-Temperature Protection | — | Yes |
| Bootstrap Diode | — | Integrated |
| Lead Finish / RoHS | — | RoHS compliant |
| Operating Mode | — | Half-bridge, hard-switched or soft-switched |