LMG2104R044 vs LMG2104R022 Vergleich
Detaillierter Direktvergleich von LMG2104R044 von Texas Instruments und LMG2104R022 von Texas Instruments. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | LMG2104R044 | LMG2104R022 |
|---|---|---|
| Marke | Texas Instruments | Texas Instruments |
| Kategorie | Power MOSFET Drivers | Power MOSFET Drivers |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $6,08 | $2,79 |
| Topologie | Half-Bridge (high-side + low-side) | Half-bridge (high-side + low-side GaN FETs) |
| Switch Type | Enhancement-mode GaN FET | — |
| Drain-Source Blocking Voltage | 100 V | — |
| Typical Rds(on) per FET | 4.4 mΩ | — |
| Integrated Gate Driver | Yes | Yes |
| Integrated Bootstrap Regulator | Yes | — |
| Logic Input Compatibility | TTL, 3.3 V and 5 V | — |
| Dead-Time Control | Smart-Switching auto dead-time | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and bootstrap) | — |
| Thermisches Abschalten | Yes | — |
| Short-Circuit / Overcurrent Protection | Yes | — |
| Gehäuse | QFN 5 mm x 4 mm | QFN-18 (VBNR) 4.5 mm × 7.0 mm |
| Betriebstemperatur | -40C to +125C | — |
| Montageart | Surface Mount | Surface Mount |
| RoHS-Status | Compliant | — |
| Product Type | — | 100V GaN Half-Bridge Power Stage with Integrated Driver |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Typical On-Resistance (RDS(on)) | — | 2.2 mΩ |
| FET Technology | — | Enhancement-mode Gallium Nitride (eGaN) |
| Smart Switching Features | — | Yes (dV/dt control, adaptive dead time) |
| Under-Voltage Lockout (UVLO) | — | Yes |
| Over-Current Protection | — | Yes |
| Over-Temperature Protection | — | Yes |
| Bootstrap Diode | — | Integrated |
| Lead Finish / RoHS | — | RoHS compliant |
| Operating Mode | — | Half-bridge, hard-switched or soft-switched |