LMG2104R044 vs LMG2104R022 Comparação
Comparação detalhada lado a lado de LMG2104R044 por Texas Instruments e LMG2104R022 por Texas Instruments. Compare especificações principais, parâmetros elétricos, encapsulamento, status do ciclo de vida, preços e disponibilidade para determinar o melhor componente para os requisitos do seu projeto.
Comparação de especificações
| Parâmetro | LMG2104R044 | LMG2104R022 |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoria | Power MOSFET Drivers | Power MOSFET Drivers |
| Status do ciclo de vida | Ativo | Ativo |
| Status do estoque | In Stock | In Stock |
| Preço unitário (USD) | $6,08 | $2,79 |
| Topologia | Half-Bridge (high-side + low-side) | Half-bridge (high-side + low-side GaN FETs) |
| Switch Type | Enhancement-mode GaN FET | — |
| Drain-Source Blocking Voltage | 100 V | — |
| Typical Rds(on) per FET | 4.4 mΩ | — |
| Integrated Gate Driver | Yes | Yes |
| Integrated Bootstrap Regulator | Yes | — |
| Logic Input Compatibility | TTL, 3.3 V and 5 V | — |
| Dead-Time Control | Smart-Switching auto dead-time | — |
| Undervoltage Lockout (UVLO) | Yes (VCC and bootstrap) | — |
| Desligamento térmico | Yes | — |
| Short-Circuit / Overcurrent Protection | Yes | — |
| Encapsulamento | QFN 5 mm x 4 mm | QFN-18 (VBNR) 4.5 mm × 7.0 mm |
| Temperatura de operação | -40C to +125C | — |
| Tipo de montagem | Surface Mount | Surface Mount |
| Status RoHS | Compliant | — |
| Product Type | — | 100V GaN Half-Bridge Power Stage with Integrated Driver |
| Drain-to-Source Voltage (VDS) | — | 100 V |
| Typical On-Resistance (RDS(on)) | — | 2.2 mΩ |
| FET Technology | — | Enhancement-mode Gallium Nitride (eGaN) |
| Smart Switching Features | — | Yes (dV/dt control, adaptive dead time) |
| Under-Voltage Lockout (UVLO) | — | Yes |
| Over-Current Protection | — | Yes |
| Over-Temperature Protection | — | Yes |
| Bootstrap Diode | — | Integrated |
| Lead Finish / RoHS | — | RoHS compliant |
| Operating Mode | — | Half-bridge, hard-switched or soft-switched |