M29F200FT55M3F2 vs M29F800FT55M3E2 Comparison

Detailed side-by-side comparison of M29F200FT55M3F2 by Micron Technology and M29F800FT55M3E2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29F200FT55M3F2 M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive

M29F200FT55M3F2 ✓ Active
Micron Technology
M29F800FT55M3E2 M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 - 8Mbit 55ns 5V Parallel NOR Flash | Micron

M29F800FT55M3E2 ✓ Active

Specification Comparison

Parameter M29F200FT55M3F2 M29F800FT55M3E2
Brand Micron Technology Micron Technology
Category Memory ICs EEPROM
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.85 $3.95
Memory Type Parallel NOR Flash NOR Flash
Density 2 Mbit (2097 kbits) 8389 kbits
Organization 256K x 8 / 128K x 16 512K x 16 bit
Access Time 55 ns 55 ns
Supply Voltage (VCC) 5 V —
Boot Block Architecture Top Boot Block —
Programming Interface Embedded program/erase controller, byte or word —
Operating Temperature -40C to +125C -40C to +125C
Automotive Qualification Yes —
Package 44-pin SO (TSOP) 44-SO (SOP)
Mounting Type Surface Mount Surface Mount
Packaging Tape & Reel (T/R) —
Number of Words (x16 mode) 128 K —
Bits per Word (x16 mode) 16 bits —
RoHS Status [DATA_NEEDED: RoHS status] Compliant (E suffix)
Program/Erase Endurance [DATA_NEEDED: program/erase cycles] —
Memory Size — 8 Mbit
Interface — Parallel
Supply Voltage — 5 V
Boot Block Location — Top boot block
Program/Erase Cycles — 100,000 per block
Program Algorithm — Embedded byte/word program
Erase Features — Erase suspend and resume
Standby Mode — Automatic standby, low power
Identification — Electronic signature

Datasheets & Resources

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