M29F200FT55M3F2 vs M29F800FT55M3E2 对比
详细并排对比 M29F200FT55M3F2 出自 Micron Technology 和 M29F800FT55M3E2 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Micron Technology
M29F200FT55M3F2 - 2Mbit 55ns 5V NOR Flash | Micron | Automotive
M29F200FT55M3F2 ✓ 量产中规格对比
| 参数 | M29F200FT55M3F2 | M29F800FT55M3E2 |
|---|---|---|
| 品牌 | Micron Technology | Micron Technology |
| 分类 | Memory ICs | EEPROM |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $1.85 | $3.95 |
| 存储器类型 | Parallel NOR Flash | NOR Flash |
| Density | 2 Mbit (2097 kbits) | 8389 kbits |
| 存储组织 | 256K x 8 / 128K x 16 | 512K x 16 bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage (VCC) | 5 V | — |
| Boot Block Architecture | Top Boot Block | — |
| Programming Interface | Embedded program/erase controller, byte or word | — |
| 工作温度 | -40C to +125C | -40C to +125C |
| Automotive Qualification | Yes | — |
| 封装 | 44-pin SO (TSOP) | 44-SO (SOP) |
| 安装类型 | Surface Mount | Surface Mount |
| Packaging | Tape & Reel (T/R) | — |
| Number of Words (x16 mode) | 128 K | — |
| Bits per Word (x16 mode) | 16 bits | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | Compliant (E suffix) |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| 存储容量 | — | 8 Mbit |
| 接口 | — | Parallel |
| 电源电压 | — | 5 V |
| Boot Block Location | — | Top boot block |
| Program/Erase Cycles | — | 100,000 per block |
| Program Algorithm | — | Embedded byte/word program |
| Erase Features | — | Erase suspend and resume |
| Standby Mode | — | Automatic standby, low power |
| Identification | — | Electronic signature |