M29F200FT55N3F2 vs M29F400FB55N3F2 Comparison

Detailed side-by-side comparison of M29F200FT55N3F2 by Micron Technology and M29F400FB55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Micron Technology
M29F200FT55N3F2 M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 - 2Mbit 55ns 5V NOR Flash | Micron

M29F200FT55N3F2 ✓ Active
Micron Technology
M29F400FB55N3F2 M29F400FB55N3F2 - 4Mbit 55ns NOR Flash 48-TSOP | Micron

M29F400FB55N3F2 - 4Mbit 55ns NOR Flash 48-TSOP | Micron

M29F400FB55N3F2 ✓ Active

Specification Comparison

Parameter M29F200FT55N3F2 M29F400FB55N3F2
Brand Micron Technology Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $2.95
Memory Type NOR Flash, Parallel NOR Flash
Density 2 Mbit (2097 kbits) 4 Mbit (4194 kbit)
Organization 256K x 8-bit / 128K x 16-bit 256K x 16 / 512K x 8
Supply Voltage (VCC) 5 V —
Access Time 55 ns 55 ns
Number of Words 128 K —
Bits per Word 16 bits —
Boot Block Architecture Top Boot Block —
Program/Erase Embedded byte/word program algorithms —
Operating Temperature -40C to +125C -40C to +125C
Package 48-pin TSOP 48-TSOP I
Mounting Type Surface Mount Surface Mount
Interface Parallel, BYTE pin selects 8/16-bit bus Parallel
Packaging Tape & Reel (TR suffix) —
RoHS Status [DATA_NEEDED: RoHS status] Compliant (lead-free build per F2 suffix)
MSL Level [DATA_NEEDED: moisture sensitivity level] —
Supply Voltage — 5 V
Boot Block — Bottom boot block
Program/Erase Controller — Embedded byte/word program algorithms
Standard Package Quantity — 1500 units (Tape & Reel)
Active/Standby Current — [DATA_NEEDED: active and standby current]
Erase/Program Endurance — [DATA_NEEDED: endurance cycles]
Data Retention — [DATA_NEEDED: retention years]
VIO Range — [DATA_NEEDED: I/O voltage range]

Datasheets & Resources

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