M29F400FB55N3F2 vs M29F200FT55N3F2 Comparison
Detailed side-by-side comparison of M29F400FB55N3F2 by Micron Technology and M29F200FT55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | M29F400FB55N3F2 | M29F200FT55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $0.00 |
| Memory Type | NOR Flash | NOR Flash, Parallel |
| Density | 4 Mbit (4194 kbit) | 2 Mbit (2097 kbits) |
| Organization | 256K x 16 / 512K x 8 | 256K x 8-bit / 128K x 16-bit |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 5 V | — |
| Interface | Parallel | Parallel, BYTE pin selects 8/16-bit bus |
| Boot Block | Bottom boot block | — |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Program/Erase Controller | Embedded byte/word program algorithms | — |
| Package | 48-TSOP I | 48-pin TSOP |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| RoHS Status | Compliant (lead-free build per F2 suffix) | [DATA_NEEDED: RoHS status] |
| Supply Voltage (VCC) | — | 5 V |
| Number of Words | — | 128 K |
| Bits per Word | — | 16 bits |
| Boot Block Architecture | — | Top Boot Block |
| Program/Erase | — | Embedded byte/word program algorithms |
| Packaging | — | Tape & Reel (TR suffix) |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |