M29F400FB55N3F2 vs M29F800FB55N3F2 Comparison
Detailed side-by-side comparison of M29F400FB55N3F2 by Micron Technology and M29F800FB55N3F2 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
M29F800FB55N3F2 - 8Mbit 5V Parallel NOR Flash 55ns | Micron
M29F800FB55N3F2 ✓ ActiveSpecification Comparison
| Parameter | M29F400FB55N3F2 | M29F800FB55N3F2 |
|---|---|---|
| Brand | Micron Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.95 | $2.47 |
| Memory Type | NOR Flash | — |
| Density | 4 Mbit (4194 kbit) | — |
| Organization | 256K x 16 / 512K x 8 | 1M x 8 / 512K x 16 |
| Access Time | 55 ns | 55 ns |
| Supply Voltage | 5 V | 5 V |
| Interface | Parallel | — |
| Boot Block | Bottom boot block | — |
| Operating Temperature | -40C to +125C | -40C to +125C |
| Program/Erase Controller | Embedded byte/word program algorithms | Embedded byte/word program algorithms |
| Package | 48-TSOP I | — |
| Mounting Type | Surface Mount | Surface Mount |
| Standard Package Quantity | 1500 units (Tape & Reel) | — |
| Active/Standby Current | [DATA_NEEDED: active and standby current] | — |
| Erase/Program Endurance | [DATA_NEEDED: endurance cycles] | — |
| Data Retention | [DATA_NEEDED: retention years] | — |
| VIO Range | [DATA_NEEDED: I/O voltage range] | — |
| RoHS Status | Compliant (lead-free build per F2 suffix) | Compliant (lead-free terminations) |
| Memory Density | — | 8389 kbits (8 Mbit) |
| Interface Type | — | Parallel NOR |
| Boot Block Architecture | — | Bottom Boot Block |
| Temperature Grade | — | Automotive (AEC-Q100) |
| Package Type | — | 48-pin TSOP1 |
| Package Shape | — | Rectangular (JESD designation TSOP1) |
| Terminal Count | — | 48 |
| JESD-609 Termination Code | — | e3 (lead-free) |
| Packaging | — | Tape & Reel (T/R) |